Nitrogen-incorporated boron-doped diamond films for enhanced electrochemical supercapacitor performance

Shradha Suman,Mateusz Ficek,Kamatchi Jothiramalingam Sankaran,Jacek Ryl,Benadict Rakesh,Mukul Gupta,Ramasamy Sakthivel,Robert Bogdanowicz
DOI: https://doi.org/10.1016/j.energy.2024.130914
IF: 9
2024-05-01
Energy
Abstract:The electrochemical (EC) supercapacitor, known for its rapid charging, reliability, and versatile applications, demands optimized electrode characteristics and an understanding of their electrochemical behaviour. Although boron-doped diamond (BDD) holds promise as a supercapacitor electrode, a crucial gap exists in comprehending its material behaviour under specific growth conditions. Here, nitrogen-incorporated BDD (N-BDD) films with different microstructures are investigated. The morphology of N-BDD films is varied by tuning the substrate temperature (T s ) from 400 °C to 850 °C during the growth process. The diamond films grown at lower T s  = 400 °C consist of faceted grains, and the grain sizes shrink as T s is increased (550 °C and 700 °C). Interestingly, the films grown at 850 °C (N-BDD850°C) show nanowire-like morphology with enhanced electrical conductivity. The spectroscopy and microscopy results reveal the concurrence of sp 3 -diamond and sp 2 -graphitic phases in the nanowire morphology. The EC supercapacitor studies disclose that formation of nanowire-like morphology for N-BDD850°C increases the active surface area and electron transport properties; hence, higher current response and enhanced specific capacitance (0.09 F cm−2 at a current density of 1.53 mA cm−2) are observed. Lifecycle stability of 82% is observed after 5000 cycles indicating the efficient performance of N-BDD850°C films.
energy & fuels,thermodynamics
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