Lightwave Irradiation-Assisted Low-Temperature Solution Synthesis of Indium-Tin-oxide Transparent Conductive Films

Cheng Ruan,Qiang Sun,Dongjie Xiao,Hangyu Li,Guodong Xia,Sumei Wang
DOI: https://doi.org/10.1016/j.ceramint.2022.01.094
IF: 5.532
2022-01-01
Ceramics International
Abstract:Transparent conductive oxide (TCO) films have important applications in many areas. Unfortunately, TCOs are usually fabricated using vacuum and high-temperature methods, preventing them from applications in low-cost flexible devices. In this paper, facile low-temperature sol-gel method is described that can be used to fabricate high-quality TCO films. This study uses lightwave (LW) irradiation (at similar to 280 degrees C) with indium-tin-oxide (ITO) as a typical example. Both structure and key properties of ITO films are investigated for different LW irradiation conditions. ITO can be formed via LW irradiation after a period as short as 5 min. Furthermore, it is found that LW irradiation can promote the formation of M - O framework, effectively remove Cl impurities, and facilitate the elimination of hydroxyl oxygen defects - even at temperatures as low as similar to 280 degrees C. The optimal ITO films show excellent electronic properties, including low sheet-resistance (14.5 Omega.sq(-1)) and high conductivity (1.7 x 10(3) S cm(-1)). Moreover, ITO films also show high transmittance (above 87%). Overall, our ITO films have a figure of merit (EOM) of 1.72 x 10(-2) Omega(-1), which is comparable to (or higher than) those of previous ITO films that were produced using conventional vacuum and high-temperature methods. Our LW irradiation method provides facile and effective approach to produce high-performance TCO films at remarkably low cost. This means these films could be used in affordable flexible large-area devices.
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