Abstract:Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

Defect Engineering of Hexagonal Boron Nitride Nanosheets Via Hydrogen Plasma Irradiation

Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments.

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

Localized Emission From Laser-Irradiated Defects In 2d Hexagonal Boron Nitride

Engineering optically active defects in hexagonal boron nitride using focused ion beam and water

Defect-engineering hexagonal boron nitride using low-energy Ar+ irradiation

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Point Defects in Two-Dimensional Hexagonal Boron Nitride: A Perspective

Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies

Optically Active Defect Engineering via Plasma Treatment in a MIS‐Type 2D Heterostructure

Selective Defect Formation in Hexagonal Boron Nitride

Activated Single Photon Emitters and Enhanced Deep‐Level Emissions in Hexagonal Boron Nitride Strain Crystal

Optically Active Defect Engineering via Plasma Treatment in a MIS‐Type 2D Heterostructure (Adv. Mater. Interfaces 29/2024)

Femtosecond Laser Writing of Spin Defects in Hexagonal Boron Nitride

Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing

Photoluminescence upconversion by defects in hexagonal boron nitride.

Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity