TiB₂/SiCN Thin-Film Strain Gauges Fabricated by Direct Writing for High-Temperature Application

Chao Wu,Fan Lin,Xiaochuan Pan,Yingjun Zeng,Yanzhang Fu,Guochun Chen,Yingping He,Qinnan Chen,Daoheng Sun,Zhenyin Hai
DOI: https://doi.org/10.1109/jsen.2022.3172346
IF: 3.6
2022-01-01
Advanced Engineering Materials
Abstract:The in situ strain/stress monitoring of hot components in harsh environments remains a challenging task. In this study, TiB2/SiCN thin-film strain gauges were fabricated on nickel base alloy substrates via direct writing. The static and dynamic strain responses were investigated from 25 °C up to 800 °C. The results show that this thin-film strain gauge fabricated by ceramic-based materials exhibits excellent thermal stability and strain response. Without any anti-oxidative protective layer deposited, its operating temperature is as high as $700^{\circ }\text{C}$ , which is 200 °C higher than that of the high-temperature piezoresistive thin-film strain gauges that have been developed and comparable to thin-film strain gauges with protective layers. The gauge factor of theTiB2/SiCN high-temperature thin-film strain gauge is 7.12, which is higher than that of most high-temperature thin-film strain gauges. In addition, the strain gauge exhibits excellent resistance stability with a mechanical hysteresis of $3~\mu \varepsilon $ and a resistance drift of 0.0008/h at room temperature. Therefore, TiB2/SiCN thin-film strain gauges provide an effective approach for the measurement of in-situ static and dynamic strain of hot components in harsh environments.
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