Structural and Chemical Bond Characteristics of Microwave Dielectric Ceramics Sm3-Bi Ga5O12

Zhaohui Wang,Junqi Chen,Huaicheng Xiang,Liang Fang

DOI: https://doi.org/10.1016/j.ceramint.2022.03.146

IF: 5.532

2022-01-01

Ceramics International

Abstract:Herein, the Bi substitution for Sm in garnet Sm3-xBixGa5O12 (x = 0-0.4) microwave dielectric ceramics is reported. A single garnet-structure phase could be achieved when Bi3+ content is in the range of 0 <= x <= 0.3. The addition of Bi3+ effectively reduces the sintering temperature of Sm3Ga5O12 ceramics from 1440 degrees C to 1140 degrees C. Furthermore, the relationship between the structure and properties of Sm3-xBixGa5O12 ceramics was investigated by Raman, SEM, TEM, and complex chemical bonding theory. The dielectric constant of Sm3-xBixGa5O12 (0 <= x <= 0.3) ceramics increases slightly from 12.68 to 13.35, which is closely related to an increase in the polarizability and the bond susceptibility chi(mu). The Q x f increases from 107,617 GHz to 137,069 GHz, which is related to the lattice energy and the Raman FWHM values. The tau(f) value of Sm3-xBixGa5O12 gradually shifted in the positive direction with the increase of Bi content and the best performance (epsilon(r) = 13.35, Q x f = 137,069 GHz and tau(f) = -15.37 ppm/degrees C) was obtained at x = 0.3.