Abstract:In this paper, a gallium nitride (GaN) vertical superjunction (SJ) MOSFET with trench gate is proposed and studied by the TCAD simulation. In order to achieve the typical electric field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field) modulation effect by the P + /N/N + structure in the conventional Si SJ-MOS, the P-GaN/unintentional doped (UID)-GaN/N + -GaN stack is alternatively used by taking into account the unavailability of P + -GaN. In this manner, the P-GaN and N + -substrate serve as the field-stop (FS) layers in the proposed GaN SJ-MOS. In the forward bias, the enhancement-mode function of the device is enabled by the gated side-wall and aperture composite channel that leads to a 1.47-V threshold voltage of the device. In the reverse bias, the breakdown of the device is governed by two mechanisms: 1) the punchthrough (PT) in the top P-GaN/N-drift junction due to the possible under design of the P-GaN thickness; 2) the avalanche breakdown triggered by high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field due to the possible under design of the bottom UID-GaN thickness. Hence, from the uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution point of view, a device optimization approach for GaN vertical SJ-MOS is proposed. The hole and electron densities of P-GaN and N-drift are optimized to achieve a uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution in the device both in the lateral and vertical directions, which is found to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6 \times 10^{16}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-3}$ </tex-math></inline-formula> . Moreover, the thickness ratio of P-GaN/UID-GaN is designed to obtain an identical intrinsic breakdown for the top P-GaN/N-drift junction and bottom UID/N-drift region, which enables the maximum Baliga’s figure-of-merit (BFOM) of the device. The concept of device design and optimization is of great interests for GaN vertical device for over kilovolts applications.

Numerical Study of a Novel GaN Vertical FinFET with a P-Base Structure for High Switching Performance

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET with Optimized Electrical Field Transfer Terminal Structure

Large Area 1.2 Kv GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

A Novel Kilovolts GaN Vertical Superjunction MOSFET With Trench Gate: Approach for Device Design and Optimization

Switching Performance Analysis of Vertical GaN FinFETs: Impact of Interfin Designs

Design of High Breakdown Voltage GaN-based Vertical HFETs with P-Gan Island Structure for Power Applications

High Voltage GaN Vertical FinFET with a Compatible Integrated Fin Diode for Low Reverse Conduction Loss.

Switching Performance Evaluation of 1200 V Vertical GaN Power FinFETs

Design and Simulation of a Nanoscale GaN-Based Vertical HFET with Pnp-Superjunction Buffer Structure

Vertical GaN Power Transistor with Embedded Fin-shaped Diode for High Performance Power Conversion

A Novel Junction Field Plates AlGaN/GaN Heterostructure Field Effect Transistors with High Breakdown Voltage and Baliga's Figure of Merit for Power Electronics Application

A Novel GaN Vertical Junction Field-Effect Transistor with Intrinsic Reverse Conduction Capability and Kilo-Volt Breakdown Voltage

Over Kilovolt Gan Vertical Super-Junction Trench Mosfet: Approach For Device Design And Optimization

A Novel Normally-off GaN Vertical Schottky Source Tunnel-Junction Field-Effect Transistor

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability.

GaN Based Vertical Transistors on GaN Substrates

Vertical Gan Power Transistor With Intrinsic Reverse Conduction And Low Gate Charge For High-Performance Power Conversion

On the Baliga’s Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate

The GaN Trench Gate MOSFET with Floating Islands