Bandgap Engineering and Enhancing Photovoltaic Effect in Bi0.5Na0.5TiO3-based Ferroelectric Ceramics

Mingwei Su,Mingqiang Zhong,Xiao Liu,Changlai Yuan,Liufang Meng,Changrong Zhou,Fei Liu,Jiwen Xu,Jiang Wang,Guanghui Rao
DOI: https://doi.org/10.1016/j.mssp.2022.106640
IF: 4.1
2022-01-01
Materials Science in Semiconductor Processing
Abstract:Defect-induced semiconducting ferroelectric oxides allow the classically ferroelectric Bi0.5Na0.5TiO3 (BNT) to adopt a low bandgap while maintaining ferroelectricity and enhancing its photovoltaic output. A series of ferroelectric semiconductors of (1-x)Bi0.5Na0.5TiO3-xBaNb(0.5)Zn(0.5)O(3-delta)(BNT-BZN) (x = 0.05, 0.10, 0.15, and 0.20) with photovoltaic effects was successfully synthesised. The BNT-BZN ferroelectric semiconductor exhibits a single perovskite structure phase, with the phase structure shifting from orthogonal to tetragonal with increasing x content. Non-equilibrium stoichiometric defects and interstitial ions in the BZN-modified BNT ceramic were found to slightly reduce the optical bandgap of BNT to 2.51 eV. Under standard simulated sunlight irradiation, the short-circuit current density (J(sc)) of the device with x = 0.10 was similar to 1.34 mu A/cm(2), and the J(sc) was modestly enhanced to 3.18 mu A/cm(2) after 60 kV/cm high-field polarizing. The impedance tests showed that the 0.90BNT-0.10BZN ceramic behaves as a p-type semiconductor, suggesting that semiconducting BNT-BZN ceramics have potential applications in photovoltaic devices and photoelectric conversion.
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