Optical and Electrical Properties of Ferroelectric Ba Bi0.5-0.5Ag0.05-0.5Na0.45Ti1-Ni0.5Nb0.5O3 Semiconductor Ceramics

Zexing Chen,Changlai Yuan,Xiao Liu,Baohua Zhu,Liufang Meng,Jiwen Xu,Changrong Zhou,Jiang Wang,Guanghui Rao
DOI: https://doi.org/10.1016/j.matlet.2020.127627
2020-01-01
Abstract:Perovskite-oxide ferroelectric semiconductors were widely concerned in photovoltaic applications due to its excellent optical absorption and thermal stability. In this work, BaxBi0.5-0.5xAgNa0.05x-0.5x-Na0.45Ti1-xNi0.5xNb0.5xO3 ceramics (abbreviation as BANT-xBNN) were successfully prepared by using a solid-state reaction method. All the ceramics illustrate perfect ferroelectric behavior. The addition of BaNi0.5Nb0.5O3 can substantially reduce the band gap of Ag doped Bi0.5Na0.5TiO3 material to similar to 2.3 eV. The short-circuit current (J(sc)) and the open-circuit voltaic (V-oc) of the selected BANT-0.04BNN ceramic poled at 2.0 kV, is 2.79 nA/cm(2) and 0.54 V, respectively. The novel BANT-xBNN system has broad application prospects for ferroelectric photovoltaic devices. (C) 2020 Elsevier B.V. All rights reserved.
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