A Design of 0.3 THz Tripler Based on AlN Substrate

Fang Shen,Bo Zhang,Yong Fan

DOI: https://doi.org/10.1109/icmmt52847.2021.9618424

2021-01-01

Abstract:In this paper, a design of 0.3 THz tripler based on AlN substrate using flip-chip GaAs Schottky diode is presented, where the peak efficiency can reach to 9%, at the same time the output power reached to 10.252 mW at the frequency of 0.303 THz when the input power was given of 20.5 dBm.

What problem does this paper attempt to address?

A 220 GHz Frequency Tripler Based on AlN Substrate

Qiuyan Luo,Tao Zhang,Bo Zhang

DOI: https://doi.org/10.1109/apcap59480.2023.10469869

2023-01-01

Abstract:In this paper, a 220GHz frequency tripler based on AlN substrate is designed. The tripler is composed of input/output E-plane wedge-shaped waveguide-suspended microstrip transitions, low-pass filter, input/output matching networks, and terahertz Schottky diodes. Meanwhile, all of the above circuits are on the same horizontal line, realizing smaller size and lower insertion loss than conventional structure. Through 3D electromagnetic simulation and harmonic balanced simulation, the output at 220 GHz reaches 7 mW with 100mW input power and the conversion efficiency is 7%. Moreover, the output of the tripler achieves 4mW in the frequency range of 205-225GHz.
A Novel 220-Ghz GaN Diode On-Chip Tripler with High Driven Power

Bo Zhang,Dongfeng Ji,Deng Fang,Shixiong Liang,Yong Fan,Xiaodong Chen

DOI: https://doi.org/10.1109/led.2019.2903430

IF: 4.8157

2019-01-01

IEEE Electron Device Letters

Abstract:This letter presents our study on a high power 220 GHz frequency tripler based on a pair of GaN planar Schottky barrier diode chain chips. In the proposed frequency tripler, the pair of diode chips was directly mounted across the metal diaphragm in parallel with the opposite polarisation inside the rectangular waveguide. The RF field is tuned to its hot-spot, coupling directly onto the diode chains, turning on a diode chain at a time in an alternative manner. Unlike the traditional ones, in order to achieve better heat dissipation, the diodes are directly connected with the metal block. Benefitting from a better heat dissipation and the power endurance capacity of GaN material, the proposed tripler can work well under a watt level input power. The simulated tripler frequency conversion performance agrees with the measurement results very well. In addition, the experimentsshowthat the frequency tripler can endure a maximum input power of 1.1W. In addition, the output power of this frequency tripler is 17.5mW at 219.5GHz driven by 900mW input power with the best efficiency of 1.93%.
A Novel Balanced Frequency Tripler With Improved Power Capacity for Submillimeter-Wave Application

Yaoling Tian,Kun Huang,Yue He,Li Li,Jina Cen,Changxing Lin,Jian Zhang

DOI: https://doi.org/10.1109/lmwc.2021.3084622

IF: 3

2021-08-01

IEEE Microwave and Wireless Components Letters

Abstract:This letter reports on the demonstration of a 204–232-GHz Schottky diode frequency tripler based on the novel balanced configuration, which provides superior power handling to traditional approaches. This tripler adopts a novel balanced configuration, which utilizes a symmetrical circuit to achieve the improved amplitude and phase balance, as well as dc bias without any on-chip capacitor. Thus, this tripler features improved power capacity by multiple diodes and better conversion efficiency. At room temperature, the fabricated tripler exhibits a 22.1% peak conversion efficiency for a nominal input power of around 300–560 mW. This tripler can deliver maximum power of 84.5 mW and 16.2% conversion efficiency for 521-mW input power at 226.8 GHz.

engineering, electrical & electronic
Design of a 340ghz Balanced Frequency Tripler

Zhong Fei Chen,Yong Zhang,Tian Tao Hu

DOI: https://doi.org/10.1109/iccps.2015.7454136

2015-01-01

Abstract:We present a design of balanced configuration frequency tripler based on planar schottky varactor diodes and mounted on a 0.03mm thickness quartz_glass substrate. The Zero-Biased balanced configuration is adopted to simplify the circuit structure and easy assembly, The simulated results shows that the best conversion loss is 11.527dB at 338.4GHz when the input power is 15dBm, the conversion loss are better than 12dB from 330GHz to 349GHz.
Design of High Power Tripler Based on On-Chip Schottky Diodes

Wu Zi-Xian,Guo Cheng,Wen Xiao-Zhu,Song Xu-Bo,Liang Shi-Xiong,Gu Guo-Dong,Zhang Li-Sen,Lyu Yuan-Jie,Zhang An-Xue,Feng Zhi-Hong

DOI: https://doi.org/10.11972/j.issn.1001-9014.2021.05.011

2021-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:This paper presents a design method of high-power triple frequency multiplier based on on-chip integrated capacitor technology and band-stop filter structure. The DC bias circuits of the tripler was improved by using the on-chip integrated capacitor based on beam lead structure so that the DC feed and RF ground were achieved simultaneously. Also, a more compact structure of the tripler was built and the model accuracy was improved. Then, the bandstop filter was used to replace the traditional stepped impedance lowpass filter to suppress the third harmonic. Hence, the structure of the tripler is further simplified while the performance is improved. A 110 GHz tripler and a 220 GHz tripler were fabricated and measured, respectively. The results show that when the input power is 500 mW, the maximum output power of 110 GHz tripler reaches 140 mW with 30 % peak efficiency. When the input power is 300 mW. the peak efficiency of 220 GHz tripler reaches 15 % and the maximum output power is 45 mW. Performance of two triplers validates the design method.
Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

Yang Liu,Bo Zhang,Yinian Feng,Xiaolin Lv,Dongfeng Ji,Zhongqian Niu,Yilin Yang,Xiangyang Zhao,Yong Fan

DOI: https://doi.org/10.3390/app10217924

2020-11-09

Applied Sciences

Abstract:Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.
A 315–345 GHz quad‐port balanced tripler with inherent suppressions on even‐order harmonics using discrete Schottky diodes

Ruoxue Li,Hao Yang,Ren Zhou,Yue He,Kun Huang,Jun Jiang,Yaoling Tian

DOI: https://doi.org/10.1002/mop.34151

IF: 1.311

2024-04-14

Microwave and Optical Technology Letters

Abstract:A high‐efficiency frequency tripler operating up to 330 GHz is developed based on a novel quad‐port balanced configuration. The proposed circuit could inhibit the even‐order harmonics with great idler loops, leaving out the lossy capacitors required in conventional triplers. Meanwhile, this topology employs two pairs of discrete Schottky diodes, which could increase the power‐handling capability by a factor of 2. In this way, a 330 GHz balanced tripler is implemented with four discrete Schottky diodes mounted on a 30‐μm‐thick quartz substrate. At room temperature, the implemented tripler module features a peak output power of 41.1 mW (@321.4 GHz) and a peak efficiency of 12.4%.

engineering, electrical & electronic,optics
A Terahertz Frequency Tripler with Single Serial Varactor Diode

Hao Li,Bo Zhang,Yong Fan

DOI: https://doi.org/10.1109/mmwcst.2012.6238137

2012-01-01

Abstract:Design and analysis of a terahertz frequency tripler whose band ranges from 106GHz to 114GHz are reported in this paper. The tripler uses single commercially available MA46H146 GaAs Flip-Chip multiplier varactor. The circuit design, simulation and optimization of the frequency tripler are carried out with HFSS and ADS. When the input power is 20dBm, the simulated conversion efficiency of the tripler is greater than 10% in the entire bandwidth, reaches 23% at 110.1GHz and has a peak value of 29.7%.
325Ghz Balanced Tripler Based on Schottky Diode

Xiaoming Chen,Bo Zhang

DOI: https://doi.org/10.1109/iceict53123.2021.9531244

2021-01-01

Abstract:In this paper, based on the frequency multiplication link with Schottky diode as the core device, a zero-bias balanced 325GHz triple frequency multiplier is designed and simulated. In the alternate joint simulation of ADS and HFSS, the frequency doubling efficiency and working bandwidth required by the design goals are achieved. Finally, the design of a 325GHz zero-bias balanced five-frequency multiplier is realized. The simulation results show that when the input drive power is 78.9mW, the working condition of the quintuple is the best. The output power is greater than 1mW in the 330GHz-350GHz frequency band, and the output power is greater than 1mW in the 320GHz-330GHz frequency band, the best frequency multiplication efficiency is 7.416%, and the best output power is 5.9mW.
A 135–150-Ghz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

Cheng Guo,Yuvaraj Dhayalan,Xiaobang Shang,Jeffrey Powell,Michael J. Lancaster,Jun Xu,Yi Wang,Hui Wang,Byron Alderman,Peter G. Huggard

DOI: https://doi.org/10.1109/tmtt.2019.2955684

IF: 4.3

2020-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432- mu m-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.
High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Junqi Liu,Fengqi Liu,Lü Li,Yong Shao,Yu Guo,Zhanguo Wang

DOI: https://doi.org/10.1088/0256-307x/23/7/035

2006-01-01

Abstract:We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60 μm respectively, a peak output power more than 500 mW is achieved in pulsed mode operation. A low threshold current density Jth = 2.6 kA/cm2 gives the devices good lasing characteristics. In a drive frequency of 1 kHz, the laser operates up to 20% duty cycle.
A 135–150 GHz High-Power Frequency Tripler with Filtering Matching Network

Cheng Guo,Xiaozhu Wen,Zixian Wu,Yang Yu,Wenxuan Wu,Anxue Zhang,Xubo Song,Shixiong Liang,Zhihong Feng

DOI: https://doi.org/10.1109/lmwc.2022.3177252

IF: 3

2022-01-01

IEEE Microwave and Wireless Components Letters

Abstract:This letter presents a 135–150 GHz high-efficiency and -power Schottky diode-based tripler integrated with low-loss waveguide filtering matching network. The active diode monolithic microwave integrated circuit (MMIC) is matched with two waveguide filters based on coupling matrix theory for a two-port network with complex impedance terminations. The filters and the active diode MMIC are integrated via the microstrip-to-waveguide transition, allowing a compact design on the relatively higher loss MMIC. In addition, an integrated on-chip capacitor is implemented to isolate dc and RF paths. The measurement shows that with 150–200 mW input power, the maximum conversion efficiency reaches 30.5% and the maximum output power is 47 mW. All filtering poles can be observed in measurements and the return loss achieves 10–15 dB within the passband. Good agreements between measurements and simulations demonstrate the validity of the design approach.
Design of a 225ghz Frequency Broadband Solid State Tripler

Hegang Deng,Bo Zhang

DOI: https://doi.org/10.1109/icmmt52847.2021.9618161

2021-01-01

Abstract:This paper studies the design and generation of 225GHz terahertz solid-state sources. At the same time, based on the finite element method of HFSS and the harmonic balance method of ADS, the input and output transition, low-pass filter, match network, DC bias part and overall circuit are used as the foundation. And, in order to achieve higher output power and frequency multiplication efficiency, and finally achieve the design goal.
Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V

Jingshu Guo,Jiejie Zhu,Siyu Liu,Kai Cheng,Qing Zhu,Pengfei Wang,Kai Liu,Ziyue Zhao,Lingjie Qin,Yuxi Zhou,Minhan Mi,Yue Hao,Xiaohua Ma

DOI: https://doi.org/10.1109/led.2023.3248277

IF: 4.8157

2023-04-01

IEEE Electron Device Letters

Abstract:In this letter, we present high-performance tri-gate normally-off HEMTs RF power devices using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices exhibit alloyed Ohmic contact resistance of about $0.35 Omega cdot $ mm, low threshold-voltage of 0.2 V, very high output current of 1.61 A/mm, and high peak power added efficiency (PAE) of 67.5% with drain voltage ${(}{V}_{ ext {d}}{)}$ of 12 V and frequency at 3.6 GHz. Owing to the high breakdown voltage of 159 V when gate bias at −4 V, the normally-off device shows a maximum output power of 5.96 W/mm at ${V}_{ ext {d}}$ = 28 V with a peak PAE of over 50% and gain of over 20 dB. The SiN/AlN/GaN epi-structures and tri-gate normally-off HEMTs demonstrated in this work show promising potential for both low-voltage and high-voltage applications.

engineering, electrical & electronic
Design of A Microwave Frequency Tripler with Conversion Gain

W. Shao,J. -L. Li

DOI: https://doi.org/10.1163/156939312800030866

2012-01-01

Journal of Electromagnetic Waves and Applications

Abstract:By utilizing a cross-junction-loaded rectangular hole as a defected ground structure (DGS) at the input side and a simple slotline-based defected ground at the output side, a novel microwave frequency tripler with conversion gain is demonstrated. The cross-junction-loaded hole at the input side acts as a reflector with the capability of providing a suitable reflection for the 3rd harmonic and improving the output power; it also maintains a good pass-band performance at the fundamental frequency f(0). The slotline-based DGS functions as a frequency selector and diminishes unwanted harmonic components at f0, 2f(0), 4f(0), and 5f(0) while only passing the desirable multiplied frequency component (3f(0)). With proper DC bias conditions, results from measurements indicate that the developed tripler achieves an approximate conversion gain of 0.9 dB at 3f(0) under an optimal input power of 2 dBm.
120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode

Honghui Liu,Zhiwen Liang,Jin Meng,Yuebo Liu,Hongyue Wang,Chaokun Yan,Zhisheng Wu,Yang Liu,Dehai Zhang,Xinqiang Wang,Baijun Zhang

DOI: https://doi.org/10.3390/mi13081172

IF: 3.4

2022-07-26

Micromachines

Abstract:Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown voltage and heat dissipation of the Schottky barrier diode (SBD). In this study, a GaN SBD chain was fabricated with n−/n+-GaN structure. As a consequence, the breakdown voltage of 54.9 V at 1 μA and cut-off frequency of 587.5 GHz at zero bias were obtained. A 120 GHz frequency-doubler module based on the GaN SBD chain was designed and fabricated. When driven with 500 mW input power in a continuous wave, the output power of the frequency-doubler module was 15.1 mW at 120 GHz. Moreover, the experiments show that the frequency-doubler module can endure an input power of 2 W. In addition, it is worth noting that the SBD chain works well at an anode temperature of 337.2 °C.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
A 135–150-Ghz Frequency Tripler with Waveguide Filter Matching

Cheng Guo,Xiaobang Shang,Michael J. Lancaster,Jun Xu,Jeffrey Powell,Hui Wang,Byron Alderman,Peter G. Huggard

DOI: https://doi.org/10.1109/tmtt.2018.2855172

IF: 4.3

2018-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:The design and performance of a WR-5 band 135-150-GHz Schottky diode-based frequency tripler which uses waveguide resonator filters for low loss impedance matching is presented in this paper. The filters used in this paper provide filtering, impedance matching, and microstrip (MS) to waveguide transitions in one structure. The matching optimization is achieved by scaling the external quality factors and adjusting the resonance frequency of the filter cavities. This approach transfers most of the tripler's matching networks from MS circuitry to lower loss rectangular waveguide resonators. This is desirable and useful in particular for submillimeter wave and terahertz frequencies. The device presented is a 47.5 to 142.5 GHz bias-less frequency tripler with a 15-GHz output bandwidth. The tripler was measured to have a conversion loss of 13.1-14 dB across the band, at an input power of 17 dBm. The measured S-11 at the input port is better than 15 dB and all the reflection zeros from the filter resonances are distinct. The good agreement between measurements and simulations verifies the accuracy of the filter-based design approach.
17 GHz Broadband Amplifier with 25 Db Gain Using a 0.3 /spl Mu/m AlGaAs/GaAs/AlGaAs HEMT Technology

M LANG,M BERROTH,M RIEGERMOTZER,ZG WANG,A HULSMANN,P HOFFMANN,G KAUFEL,K KOHLER,B RAYNOR

DOI: https://doi.org/10.1049/el:19951352

1995-01-01

Electronics Letters

Abstract:A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.3 mu m gate length has been designed and fabricated. The amplifier can be operated with single-ended or differential inputs with an input resistance of 50 Omega. The output signals are differential with both internal load resistances at 100 Omega, the chip area is 1X1 mm(2), and the power consumption is similar to 375 mW.
Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Monisha Ghosh,Shilpi Bhattacharya Deb,Aritra Acharyya,Arindam Biswas,Hiroshi Inokawa,Hiroaki Satoh,Amit Banerjee,Alexey Y Seteikin,Ilia G Samusev

DOI: https://doi.org/10.3390/nano14100873

2024-05-17

Abstract:In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1-xN/GaN/AlxGa1-xN material system, with a fixed aluminum mole fraction of x = 0.3. Two distinct MQW diode configurations, namely p+-n junction-based and Schottky barrier diode structures, were investigated for their THz potential. To enhance reverse breakdown characteristics, we propose employing mesa etching and nitrogen ion implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise and improve overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and its applications.
Design of W-Band Tripler

Tao Yang,Ren Hou Liu,Wei Gan Lin

DOI: https://doi.org/10.1023/A:1006609103007

2000-01-01

International Journal of Infrared and Millimeter Waves

Abstract:This paper describes a high performance W-band tripler with a novel structure. Input frequency is 25-36.7 GHz, output frequency 75-110 GHz, input power is 20dBm and conversion loss 16 dB. It can extend microwave signal to W-band (adding in Ka-band doubler). In the design, we give some approaches to achieve high band performances.

A Design of 0.3 THz Tripler Based on AlN Substrate

A 220 GHz Frequency Tripler Based on AlN Substrate

A Novel 220-Ghz GaN Diode On-Chip Tripler with High Driven Power

A Novel Balanced Frequency Tripler With Improved Power Capacity for Submillimeter-Wave Application

Design of a 340ghz Balanced Frequency Tripler

Design of High Power Tripler Based on On-Chip Schottky Diodes

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

A 315–345 GHz quad‐port balanced tripler with inherent suppressions on even‐order harmonics using discrete Schottky diodes

A Terahertz Frequency Tripler with Single Serial Varactor Diode

325Ghz Balanced Tripler Based on Schottky Diode

A 135–150-Ghz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

A 135–150 GHz High-Power Frequency Tripler with Filtering Matching Network

Design of a 225ghz Frequency Broadband Solid State Tripler

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V

Design of A Microwave Frequency Tripler with Conversion Gain

120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode

A 135–150-Ghz Frequency Tripler with Waveguide Filter Matching

17 GHz Broadband Amplifier with 25 Db Gain Using a 0.3 /spl Mu/m AlGaAs/GaAs/AlGaAs HEMT Technology

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Design of W-Band Tripler