Abstract:As the electronic industry develops rapidly, nowadays, flexible dielectric materials with excellent integrated dielectric performances including high dielectric permittivity ( ɛ ) and breakdown strength ( E b ) but low loss, are highly pursued. In this work, to concurrently improve the ɛ and E b but restrain the loss of original Si/polyvinylidene fluoride (PVDF) composites, the core@shell structured Si@SiO 2 particles first were produced via high temperature oxidation process, and then incorporated into the PVDF to generate morphology-dependent composites with high-ɛ and E b but low loss. The dielectric properties of the composites were investigated in terms of the filler types and concentrations, frequency, and theoretically fitted using the Havriliak-Negami equation to reveal the SiO 2 shell’ role in affecting the polarization mechanism. When compared to pure Si/PVDF at high filler loadings, remarkably inhibited dielectric loss and conductivity as well as enhanced E b concurrently can be achieved in the Si@SiO 2 /PVDF composites still harvesting a high-ɛ. This is because the insulating SiO 2 shell not only effectively prevents the raw Si particles from direct physical contact, but also greatly impedes the long-range charge carrier migration via raising energy barrier subsequently leading to obviously enhanced E b . Moreover, the dielectric loss and conductivity apparently decrease with increasing the SiO 2 shell thickness due to its pronounced suppression effect. The prepared Si@SiO 2 /PVDF with a high E b and ɛ but low loss, show bright future uses in micro-electronic devices used for high-voltage purposes.

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