Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

Stable Single-mode 20-Channel Uniform Buried Grating DFB QCL Array Emitting at ~8.3 Μm

Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser under High Current Via a Grating Reflector

Wavelength-Stable Metal Grating Distributed Feedback Quantum Cascade Laser Emitting at Λ ~ 7.2 Μm

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Electro-absorption Modulated 53 Gbps Widely Tunable Laser Based on Half-Wave V-coupled Cavities

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

Electro-absorption Modulated Tunable V-cavity Laser

Low Divergence Single-Mode Surface-Emitting Concentric-Circular-Grating Terahertz Quantum Cascade Lasers

Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

Tunable V-Cavity Lasers Integrated with a Cyclic Echelle Grating for Distributed Routing Networks

Monolithically Integrated 8 × 8 Transmitter-Router Based on Tunable V-Cavity Laser Array and Cyclic Arrayed Waveguide Grating Router

Index-Coupled Surface Porous Grating Distributed Feedback Quantum Cascade Laser

Integrated Tunable DBR Quantum Cascade Lasers with 30 Cm-1Tuning Range at 4.7 Μm

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Novel high-speed low-chirp q-modulated semiconductor distributed feedback laser

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Terahertz first-order distributed feedback quantum cascade laser with light extraction via a diffraction grating

High Frequency Mid-infrared Quantum Cascade Laser Integrated with Grounded Coplanar Waveguide Transmission Line

1.3 Μm 10-Wavelength Laterally Coupled Distributed Feedback Laser Array with High-Duty-Ratio Gratings