Abstract:Ferroelectric control of polarity of the spin‐polarized current can be achieved in van der Waals multiferroic heterostructures via reversible FE switch of the internal electric field and the FE control of the interfacial effect. This opens up new opportunities for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as multiferroic spin field‐effect transistors. Ferroelectric (FE) control of magnetism at nanoscale, for instance, FE control of the polarity of spin‐polarized current is crucial for technological advances in magnetoelectric and spintronic applications. However, this fascinating functionality has not been reported in nanoscale systems yet. Herein, a new class of FE/A‐type antiferromagnetic heterobilayer/FE van der Waals (vdW) multiferroic structures is found, in which the FE control of polarity of spin‐polarized current is found possible. Take Sc2CO2/CrSiTe3/CrGeTe3/Sc2CO2 heterostructure as a successful example. First‐principles calculations reveal that its polarity of half‐metallicity can be switched by flipping the FE polarization orientation. Meanwhile, device transport simulation shows that its up/down spin current transmission ratio is as large as 0.1 × 103 at P→↑↑ Sc2CO2 configuration and is only 2.6 × 10−3 at P→↓↓ Sc2CO2 configuration in the vdW multiferroic heterostructures. Essentially, it stems from the reversible FE switch of the internal electric field across the CrSiTe3/CrGeTe3 heterobilayer and the FE control of the interfacial effect between Sc2CO2 and Cr(Si/Ge)Te3 layers. This work opens a direction for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as spin field‐effect transistors.

Facet-engineering Enhanced Room-Temperature Ferroelectric Control of Magnetism in Semiconducting Β-Fesi2″

Strong Facet-Induced and Light-Controlled Room-Temperature Ferromagnetism in Semiconducting Β-Fesi2 Nanocubes.

Room-temperature Ferroelectric Control of 2D Layered Magnetism

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Toward Room-Temperature Electrical Control of Magnetic Order in Multiferroic van der Waals Materials

Electrically Controlled Non-Volatile Switching of Magnetism in Multiferroic Heterostructures Via Engineered Ferroelastic Domain States

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Electric‐Field Control of Propagating Spin Waves by Ferroelectric Domain‐Wall Motion in a Multiferroic Heterostructure

Strong Non-Volatile Voltage Control Of Magnetism In Magnetic/Antiferroelectric Magnetoelectric Heterostructures

Room‐Temperature Magnetoelectric Coupling in Atomically Thin ε‐Fe2O3

Electric Field Control of the Magnetization Dynamics of Ferromagnetic/Ferroelectric Multiferroic Heterostructure.

Ferroelectric Control of Polarity of the Spin‐polarized Current in Van Der Waals Multiferroic Heterostructures

Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor

Room-temperature Electric Field Modulation of Magnetization in a Helimagnet

Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Interfacial Charge-Mediated Non-Volatile Magnetoelectric Coupling in Co0.3Fe0.7/Ba0.6Sr0.4TiO3/Nb:SrTiO3 Multiferroic Heterostructures

Conduction control at ferroic domain walls via external stimuli.

Electric-Field Control Of Nonvolatile Magnetization In Co40fe40b20/Pb(Mg1/3nb2/3)(0.7)Ti0.3o3 Structure At Room Temperature

Electric control of magnetism at room temperature

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures

Facile Control of Ferroelectricity Driven by Ingenious Interaction Engineering