High-Performance Acoustic Wave Devices on LiTaO$_{3}$/SiC Hetero-Substrates
Liping Zhang,Shibin Zhang,Jinbo Wu,Pengcheng Zheng,Hongyan Zhou,Hulin Yao,Zhongxu Li,Kai Huang,Huarui Sun,Xin Ou
DOI: https://doi.org/10.1109/tmtt.2023.3267556
IF: 4.3
2023-01-01
IEEE Transactions on Microwave Theory and Techniques
Abstract:We present high-performance shear horizontal surface acoustic wave (SH-SAW) and longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO $_{3})$ thin films on silicon carbide (SiC) substrate. The 4-in LiTaO $_{3}$ -on-SiC (LTOSiC) hetero-substrate was prepared by an ion-slicing process. Instead of the Si-based piezo-on-insulator substrates, generally embedded with functional dielectric layers (e.g., SiO $_{2})$ , LTOSiC with a simple structure has achieved exciting results on device frequency, quality factor ( $Q)$ , temperature coefficient of frequency (TCF), and thermal transport properties. The demonstrated resonators show the scalable resonances of 1.19–4.91 GHz, in which the gigahertz SH-SAW resonator exhibits an ultrahigh Bode- $Q$ of 8100 and an excellent TCF of $-$ 4.3 ppm/K, while the LL-SAW resonator presents a high Bode- $Q$ of 1000 and an improved TCF of $-$ 25.4 ppm/K at 5.0 GHz. Besides, the demonstrated filters show the center frequencies ( $f_c)$ of 2.74–4.26 GHz, the insertion loss (IL) below 1.26 dB, and an out-of-band (OoB) rejection of 10–45 dB. The SH-SAW-based filter shows a $f_c$ of 3.36 GHz, an IL of 0.78 dB, and a 3-dB bandwidth of 180 MHz, while the LL-SAW-based filter shows a $f_c$ of 3.85 GHz and an IL of 0.85 dB. Overall, LTOSiC may serve as an advanced material platform of acoustic devices for 5G-frequency range 1 (5G-FR1) bands.
engineering, electrical & electronic