CSOI: Beyond Silicon-on-Insulator Photonics

Lin Chang,Garrett D. Cole,Galan Moody,John E. Bowers

DOI: https://doi.org/10.1364/opn.33.1.000024

2022-01-01

Optics and Photonics News

Abstract:Compound semiconductor on insulator—an emerging, potentially revolutionary platform-is enabling radically new photonic devices with superb functionality.

What problem does this paper attempt to address?

Pioneering the future with silicon carbide integrated photonics

A. Boretti,Q. Li,S. Castelletto

DOI: https://doi.org/10.1016/j.optlastec.2024.111910

IF: 4.939

2024-10-06

Optics & Laser Technology

Abstract:Silicon carbide (SiC) integrated photonics is advancing rapidly, promising to overcome the limitations of other integrated photonics platforms and enable new quantum devices. This progress is driven by SiC's exceptional optical properties and significant advancements in epitaxial growth technologies, enabling wafer-scale production and manufacturability. The development of photonic components in SiC and SiC on Insulators at the wafer scale marks a paradigm shift in the role of SiC in photonics, a field dating back over 20 years. These advancements are seamlessly incorporating SiC into both integrated photonics and the emerging quantum photonics sector. SiC's wide bandgap, high thermal conductivity, and robust nonlinear optical response make it ideal for a range of applications, from resilient photonic circuits in harsh environments to quantum devices that could revolutionize computing and communication. As research progresses, SiC-integrated photonics is poised to deliver cutting-edge, energy-efficient, and high-performance solutions that align with the goals of a sustainable and technologically advanced future.

optics,physics, applied
Silicon Photonic Network-on-chip and Enabling Components

Ting Hu,Chen Qiu,Ping Yu,LongZhi Yang,WanJun Wang,XiaoQing Jiang,Mei Yang,Lei Zhang,JianYi Yang

DOI: https://doi.org/10.1007/s11431-012-5112-2

2013-01-01

Abstract:As the transistor’s feature scales down and the integration density of the monolithic circuit increases continuously,the traditional metal interconnects face significant performance limitation to meet the stringent demands of high-speed,low-power and low-latency data transmission for on-and off-chip communications.Optical technology is poised to resolve these problems.Due to the complementary metal-oxide-semiconductor（CMOS） compatible process,silicon photonics is the leading candidate technology.Silicon photonic devices and networks have been improved dramatically in recent years,with a notable increase in bandwidth from the megahertz to the multi-gigahertz regime in just over half a decade.This paper reviews the recent developments in silicon photonics for optical interconnects and summarizes the work of our laboratory in this research field.
Integrated Microwave Photonics on Silicon-On-Insulator Platform

Hui Yu,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/piers.2016.7734242

2016-01-01

Abstract:For the last 30 years, most microwave photonic systems demonstrated relied on discrete photonic devices and optical fibers, and thus their performances are routinely limited in terms of the cost, footprint, reliability, power consumption, and so on. To address these issues, now it is widely believed that MWP systems of the next generation will be built on photonic integrated circuits (PIC). On the other hand, motivated by applications in optical interconnect systems, silicon photonics based on silicon-on-insulator (SOI) platform has grown as one of the most matured photonic integration technology. Therefore, a lot of efforts recently are devoted to integrate MWP systems on SOI so as to take advantages of silicon photonics, including CMOS compatibility, low cost and large volume manufacturing, and so on.
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
The Past, Present, and Future of Silicon Photonics

Richard Soref

DOI: https://doi.org/10.1109/jstqe.2006.883151

IF: 4.9

2006-11-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:The pace of the development of silicon photonics has quickened since 2004 due to investment by industry and government. Commercial state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55-µm monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA). The preliminary results indicate that the silicon photonics are truly CMOS compatible. R&D groups have now developed 10-100-Gb/s electro-optic modulators, ultrafast Ge-on-Si photodetectors, efficient fiber-to-waveguide couplers, and Si Raman lasers. Electrically pumped silicon lasers are under intense investigation, with several approaches being tried; however, lasing has not yet been attained. The new paradigm for the Si-based photonic and opto-electric integrated circuits is that these chip-scale networks, when suitably designed, will operate at a wavelength anywhere within the broad spectral range of $1.2-100 \ \mu \mathrm{m}$, with cryocooling needed in some cases.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Mid-infrared Integrated Photonics on Silicon: a Perspective

Hongtao Lin,Zhengqian Luo,Tian Gu,Lionel C. Kimerling,Kazumi Wada,Anu Agarwal,Juejun Hu

DOI: https://doi.org/10.1515/nanoph-2017-0085

IF: 7.5

2018-01-01

Nanophotonics

Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.
Heterogeneously Integrated InP\/Silicon Photonics: Fabricating Fully Functional Transceivers

Richard Jones,Pierre Doussiere,Jeffrey B. Driscoll,Wenhua Lin,Haijiang Yu,Yulia Akulova,Tin Komljenovic,John E. Bowers

DOI: https://doi.org/10.1109/mnano.2019.2891369

2019-04-01

IEEE Nanotechnology Magazine

Abstract:Silicon (SI) Photonics Research and development started more than 30 years ago and has intensified in the last 15 years as levels of device functionality, photonic integration, and commercialization have all increased [1]. The key drivers for using Si in photonics arise from the quality of wafers and the superior processing capabilities developed and funded by the microelectronics industry. It has the promise to revolutionize the photonics industry in the same way that CMOS design and processing revolutionized the microelectronics industry, by driving down photonic chip cost while enabling higher levels of photonic integration and functionality. Commercialization, so far, has focused on optical communication (Telecom [2] and data center [3]) and biosensing [4], with a wealth of future application areas, including high-performance computing [5], automotive (lidar) [6], optical switches [7], and artificial intelligence [8].
Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Christian Lafforgue,Samuel Serna,Sylvain Guerber,Hongtao Lin,Joan Manel Ramirez,Guillaume Marcaud,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Nicolas Dubreuil,Delphine Marris-Morini,Juejun Hu,Frédéric Boeuf,Sébastien Cremer,Stéphane Monfray,Eric Cassan,Laurent Vivien

DOI: https://doi.org/10.1364/oedi.2019.ow1c.2

2019-01-01

Abstract:Integrated photonics has for several years included in its panoply the development of functions based on third-order non-linear optical phenomena, from the generation of supercontinuum or frequency comb sources to metrology or spectroscopy on chip applications. This natural evolution, after the development of high-speed transceivers in the last few years, particularly in silicon photonics, is based on a number of compromises and still has to solve problems, particularly concerning the integration of nonlinear materials on silicon and their exploitation. The work we present addresses two directions. The first is oriented towards the development of a supercontinuum source using Nitrogen-rich photonic circuits from an industrial CMOS platform, while the second aims at the development of hybrid highly nonlinear waveguides significantly reducing the impact of twophoton absorption in the telecom window around 1,55μm by exploiting silicon slot waveguides infiltrated by chalcogenide glasses (As2S3).
Silicon carbide for integrated photonics

Ailun Yi,Chengli Wang,Liping Zhou,Yifan Zhu,Shibin Zhang,Tiangui You,Jiaxiang Zhang,Xin Ou

DOI: https://doi.org/10.1063/5.0079649

IF: 15

2022-09-02

Applied Physics Reviews

Abstract:Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.

physics, applied
Study of Silicon Photonics Based on Standard CMOS Foundry

Jianyi Yang,Yong Zhao,Chen Qiu,Wanjun Wang,Guomin Jiang,Yinlei Hao,Xiaoqing Jiang

DOI: https://doi.org/10.1117/12.870406

2010-01-01

Abstract:Silicon photonics can found applications in optical interconnects and optical signal processing. Recent years, silicon photonics was developed rapidly. In this paper, we report our research work on silicon photonics. Based on the standard CMOS foundry, we studied the silicon waveguides and related photonic components.
Advanced silicon device technologies for optical interconnects

Lech Wosinski,Zhechao Wang,Fei Lou,Daoxin Dai,Sebastian Lourdudoss,Lars Thylén

DOI: https://doi.org/10.1117/12.909919

2012-01-01

Abstract:Silicon photonics is an emerging technology offering novel solutions in different areas requiring highly integrated communication systems for optical networking, sensing, bio-applications and computer interconnects. Silicon photonics-based communication has many advantages over electric wires for multiprocessor and multicore macro-chip architectures including high bandwidth data transmission, high speed and low power consumption. Following the INTEL's concept to "siliconize" photonics, silicon device technologies should be able to solve the fabrication problems for six main building blocks for realization of optical interconnects: light generation, guiding of light including wavelength selectivity, light modulation for signal encoding, detection, low cost assembly including optical connecting of the devices to the real world and finally the electronic control systems.
Silicon Carbide Photonics Bridging Quantum Technology

Stefania Castelletto,Alberto Peruzzo,Cristian Bonato,Brett C. Johnson,Marina Radulaski,Haiyan Ou,Florian Kaiser,Joerg Wrachtrup

DOI: https://doi.org/10.1021/acsphotonics.1c01775

IF: 7

2022-01-01

ACS Photonics

Abstract:In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide (SiC) has witnessed many advances, giving rise to electronic devices widely used in highpower and high-frequency applications. Recent research has revealed that SiC also exhibits unique optical properties that can be utilized for novel photonic devices. SiC is a transparent material from the UV to the infrared, possess nonlinear optical properties from the visible to the mid-infrared and it is a meta-material in the mid-infrared range. SiC fluorescence due to color centers can be associated with single photon emitters and can be used as spin qubits for quantum computation and communication networks and quantum sensing. This unique combination of excellent electronic, photonic and spintronic properties has prompted research to develop novel devices and sensors in the quantum technology domain. In this perspective, we highlight progress, current trends and prospects of SiC science and technology underpinning the development of classical and quantum photonic devices. Specifically, we lay out the main steps recently undertaken to achieve high quality photonic components, and outline some of the current challenges SiC faces to establish its relevance as a viable photonic technology. We will also focus on its unique potential to bridge the gap between classical and quantum photonics, and to technologically advance quantum sensing applications. We will finally provide an outlook on possible alternative applications where photonics, electronics, and spintronics could merge.
Novel Photonic Applications of Silicon Carbide

Haiyan Ou,Xiaodong Shi,Yaoqin Lu,Manuel Kollmuss,Johannes Steiner,Vincent Tabouret,Mikael Syväjärvi,Peter Wellmann,Didier Chaussende

DOI: https://doi.org/10.3390/ma16031014

IF: 3.4

2023-01-23

Materials

Abstract:Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si

Huiyun Liu,Yikai Su,Chuanbo Li,Xuhan Guo

DOI: https://doi.org/10.1088/1674-4926/40/10/100101

2019-01-01

Journal of Semiconductors

Abstract:>The research in silicon photonics has been booming due to its potential for lowcost,reliable,energy-efficient and high-density chip-wise integration using widely available CMOS technology,featuring the tremendous success in modulator,detector and other passive waveguide components in industry.However,the absence of efficient and reliable electrical to optical converter on Si platform has
Silicon Photonics Integration for Future Generation Optical Network.

Michal Lipson,Steven A. Miller,Christopher T. Phare,You-Chia Chang,Xingchen Ji,Oscar A. Jimenez Gordillo,Aseema Mohanty,Samantha P. Roberts,Min Chul Shin,Brian Stern,Moshe Zadka

DOI: https://doi.org/10.1109/ecoc.2018.8535125

2018-01-01

Abstract:The high power of photonic elements is now impeding the scalability of silicon photonic-based platforms. We show approaches based on novel materials as well as novel multiplexing approaches that alleviate this scalability challenge and enable large scale silicon photonic systems.
Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip

Amir H. Atabaki,Sajjad Moazeni,Fabio Pavanello,Hayk Gevorgyan,Jelena Notaros,Luca Alloatti,Mark T. Wade,Chen Sun,Seth A. Kruger,Huaiyu Meng,Kenaish Al Qubaisi,Imbert Wang,Bohan Zhang,Anatol Khilo,Christopher V. Baiocco,Miloš A. Popović,Vladimir M. Stojanović,Rajeev J. Ram

DOI: https://doi.org/10.1038/s41586-018-0028-z

IF: 64.8

2018-04-01

Nature

Abstract:Electronic and photonic technologies have transformed our lives—from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions1,2. This goal is hindered by the fact that most silicon nanotechnologies—which enable our processors, computer memory, communications chips and image sensors—rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal–oxide–semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing3,4. By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions5, but with the performance, complexity and scalability of ‘systems on a chip’1,6–8. As transistors smaller than ten nanometres across become commercially available9, and as new nanotechnologies emerge10,11, this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

multidisciplinary sciences
Integrated Photonic Passive Building Blocks on Silicon-On-Insulator Platform

Francesco Amanti,Greta Andrini,Fabrizio Armani,Fabrizio Barbato,Vittorio Bellani,Vincenzo Bonaiuto,Simone Cammarata,Matteo Campostrini,Thu Ha Dao,Fabio De Matteis,Valeria Demontis,Simone Donati,Giovanni Di Giuseppe,Sviatoslav Ditalia Tchernij,Andrea Fontana,Jacopo Forneris,Luca Frontini,Roberto Gunnella,Simone Iadanza,Ali Emre Kaplan,Cosimo Lacava,Valentino Liberali,Leonardo Martini,Francesco Marzioni,Luca Morescalchi,Elena Pedreschi,Paolo Piergentili,Domenic Prete,Valentino Rigato,Carlo Roncolato,Francesco Rossella,Matteo Salvato,Fausto Sargeni,Jafar Shojaii,Franco Spinella,Alberto Stabile,Alessandra Toncelli,Valerio Vitali

DOI: https://doi.org/10.3390/photonics11060494

IF: 2.536

2024-05-24

Photonics

Abstract:Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few 'building blocks' which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design methodologies. Key components discussed include waveguides, fiber-to-chip couplers, edges and gratings, phase shifters, splitters and switches (including y-branch, MMI, and directional couplers), as well as subwavelength grating structures and ring resonators. Additionally, this review addresses challenges and future prospects in advancing integrated photonic circuits on SOI platforms, focusing on scalability, power efficiency, and fabrication issues. The objective of this review is to equip researchers and engineers in the field with a comprehensive understanding of the current landscape and future trajectories of integrated photonic components on SOI substrates with a 220 nm thick device layer of intrinsic silicon.

optics
Perspective on the future of silicon photonics and electronics

Near Margalit,Chao Xiang,Steven M. Bowers,Alexis Bjorlin,Robert Blum,John E. Bowers

DOI: https://doi.org/10.1063/5.0050117

IF: 4

2021-05-31

Applied Physics Letters

Abstract:Silicon photonics is advancing rapidly in performance and capability with multiple fabrication facilities and foundries having advanced passive and active devices, including modulators, photodetectors, and lasers. Integration of photonics with electronics has been key to increasing the speed and aggregate bandwidth of silicon photonics based assemblies, with multiple approaches to achieving transceivers with capacities of 1.6 Tbps and higher. Progress in electronics has been rapid as well, with state-of-the-art chips including switches having many tens of billions of transistors. However, the electronic system performance is often limited by the input/output (I/O) and the power required to drive connections at a speed of tens of Gbps. Fortunately, the convergence of progress in silicon photonics and electronics means that co-packaged silicon photonics and electronics enable the continued progress of both fields and propel further innovation in both.

physics, applied
Preface: Special Topic on Novel Optoelectronic Devices

Ming Li,Xuhan Guo

DOI: https://doi.org/10.1360/nso/20220045

2022-01-01

National Science Open

Abstract:The research and development(R&D)in silicon or Ⅲ/Ⅴ photonics are booming and emerging as the mainstream platforms for large-scale photonic integration circuits,which offer the well-established ad-vantages of scalable chip-wise integration with low cost at high volume and high yield,following the standard complementary metal oxide semiconductor fabrication processes in the microelectronics industry.
Single Crystal Silicon-Germanium-On-Insulator for High Density Optical Interconnects

Callum G. Littlejohns,Mohamed Said Rouifed,Haodong Qiu,Tina Guo Xin,Ting Hu,Thalia Dominguez Bucio,Milos Nedeljkovic,David J. Thomson,Ali Z. Khokhar,Goran Z. Mashanovich,Graham T. Reed,Hong Wang,Frederic Y. Gardes

DOI: https://doi.org/10.1109/piers.2016.7735229

2016-01-01

Abstract:The field of silicon photonics has seen a period of rapid technological advancement over the past decade, with significant interest and investment from both academia and industry. Progress is expected to continue, with global sales of silicon photonics products predicted to reach US$1 billion by 2020. A key motivation for silicon photonics is integration; achieved by using the CMOS compatible materials silicon and germanium. Here, we establish a silicon-germanium-on-insulator material platform using a rapid melt growth technique. We present a novel method for the fabrication of multiple, uniform composition localised silicon-germanium-on-insulator layers, demonstrating the ability to tune the composition of each layer by modifying the structural parameters of the layers, as shown in Fig. 1. This is achieved using only a single Ge growth step and a single anneal step, therefore dramatically reducing fabrication cost and complexity when compared with traditional epitaxy techniques.We investigate the regrowth mechanism exhibited by this rapid melt growth technique, and study the effects of the structural parameters of the tailored structures on the SiGe composition profiles. Using this material platform we can potentially exploit the tunable bandgap of the SiGe alloy for wavelength division multiplexing applications, with the potential to form low power electro-absorption modulators with an extremely high bandwidth density when compared to other modulator device designs. In addition, we discuss extending silicon photonic circuits into mid-infrared wavelengths, and identify the potential applications of such systems.We present some early results from passive mid-infrared photonic devices on a silicon-on-insulator platform.

CSOI: Beyond Silicon-on-Insulator Photonics

Pioneering the future with silicon carbide integrated photonics

Silicon Photonic Network-on-chip and Enabling Components

Integrated Microwave Photonics on Silicon-On-Insulator Platform

Development of Silicon Photonic Devices for Optical Interconnects

The Past, Present, and Future of Silicon Photonics

Mid-infrared Integrated Photonics on Silicon: a Perspective

Heterogeneously Integrated InP\/Silicon Photonics: Fabricating Fully Functional Transceivers

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Silicon carbide for integrated photonics

Study of Silicon Photonics Based on Standard CMOS Foundry

Advanced silicon device technologies for optical interconnects

Silicon Carbide Photonics Bridging Quantum Technology

Novel Photonic Applications of Silicon Carbide

Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si

Silicon Photonics Integration for Future Generation Optical Network.

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip

Integrated Photonic Passive Building Blocks on Silicon-On-Insulator Platform

Perspective on the future of silicon photonics and electronics

Preface: Special Topic on Novel Optoelectronic Devices

Single Crystal Silicon-Germanium-On-Insulator for High Density Optical Interconnects