Study on the Growth Mechanism of Chlorocarbon Radicals on the Surface of CVD Diamond (100)

Xiao Gang Jian,Ji Bo Hu
DOI: https://doi.org/10.4028/www.scientific.net/kem.907.83
2022-01-01
Key Engineering Materials
Abstract:In the CH3Cl/H2 atmosphere, the adsorption process of various active chlorocarbon groups (CH2Cl, CHCl, CCl) and CH3 on the surface of clean diamond used density functional theory (DFT) calculations during CVD process. The reaction heat and activation energy of the active sites on the adsorption reconstituted surface of D-CH3 and D-CH2Cl were calculated by transition state search to explore the actual effect of the carbon chloride active group on the surface of CVD diamond (100).The results showed that the adsorption capacity of CHCl, CH2Cl and CCl on the substrate was gradually weakened and the adsorption energy of CH2Cl and CH3 was close. Both CHCl and CH2Cl could form diamond bonds with the substrate carbon atoms to directly promote the growth of the diamond coating. Since the C-Cl bond was weaker than the C-H bond, the adsorption recombination surface of CH2Cl generated an energy barrier of the active site lower than the adsorption reconstitution surface of CH3. Therefore, using CH3Cl/H2 as a gas source could effectively reduce the energy required for diamond coating growth.
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