Abstract:INTRODUCTION Gallium nitride (GaN) is of particular interest due to its direct wide band gap energy (3.4 eV), high breakdown field, high electron saturation velocity and outstanding physicochemical properties [1-2]. For device applications, a GaN film is generally prepared by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. However, in these heteroepitaxial GaN layers, the lattice and thermal mismatch between GaN and sapphire leads to a large number of dislocations [3]. As a result, flat, clean and undamaged surface is essential to form homo-epitaxial GaN layers with a low dislocation density [4]. However, GaN is very difficult to achieve an ideal polishing efficiency because of its high hardness and stable chemical properties [5]. Mechanical polishing with hard abrasives such as diamond and alumina particles can achieve flatness rapidly, but it can introduce scratch damages [6]. Wet etching can planarize GaN surface without damage by using photo electrochemical treatment, hot phosphoric acid, and molten KOH [7], but it produces rough surface. An etching method, which termed catalyst-referred etching (CARE) has been reported to produce an atomically flat damagefree surface of GaN [8], but the removal rate was just 3.4-3.8 nm/h [5]. Chemical-mechanical polishing (CMP) is considered to be an effective method to realize atomic-level smooth and damages free surface of materials. The studies of Hayashi et al.[9] suggested the importance of the selection of abrasive particles and led to the conclusion that abrasive should be softer than GaN to suppress the introduction of sub-surface damage layers. Colloidal silica based slurry is one of the possible candidates to achieve a damage free surface with a true CMP process as colloidal silica is much softer than GaN [10]. Hideo Aida et al. [11] reported the CMP process of gallium face of GaN with colloidal silica based slurry. In their studies, there were a lot of scratches generated during polishing process, which under the condition of abrasive particle size and concentration of 40nm and 40% respectively. It took him about 150 h to obtain damage-free surface. In our previous published work, we got damage-free surface within 9 h by using Al2O3 and colloidal silica slurry respectively [12]. The purpose of this work is to make clear of the principal influence factors in scratches on the surface of GaN during CMP process, to fulfill controllable and optimization CMP process, and provide a reference basis for the material removal mechanism of GaN.

Anisotropy Dependence of Material Removal and Deformation Mechanisms During Nanoscratch of Gallium Nitride Single Crystals on (0001) Plane

Deformation and removal mechanism of single crystal gallium nitride in nanoscratching

Unveiling the temperature-dependent deformation mechanisms of single crystal gallium nitride in nanoscratching

Research on the material removal mechanism of vibration-assisted nano-scratch on single-crystal GaN by molecular dynamics

Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding

Atomic understanding of elastic-plastic deformation and crack evolution for single crystal AlN during nanoscratch

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic 8-Ga2o3 Single Crystals

Understanding the machining mechanism in ultrasonic vibration-assisted nanogrinding of GaN

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

Influence of Anisotropy on Material Removal and Deformation Mechanism Based on Nanoscratch Tests of Monocrystal Silicon

Investigation of Gallium Arsenide Deformation Anisotropy during Nanopolishing via Molecular Dynamics Simulation

The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal

Analysis of scratches generated on gan substrates during polishing

Anisotropy mechanical behavior of crystals based on gallium arsenide cleavage processing

Anisotropic Fracture Toughness of Bulk GaN

The Effect of Crystallographic Orientation on Material Removal Behavior of (001) Plane Kdp Crystal in Nano-Scratch Test

Investigation on nano-grinding process of GaN using molecular dynamics simulation: Nano-grinding parameters effect

Molecular dynamics simulation of the scratching process of GaAs with different crystal orientations

Study on the crack formation mechanism in nano-cutting of gallium arsenide

Abrasive machining induced surface layer damage behavior and formation mechanism of monocrystalline β-Ga 2 O 3 : A comparative study of nanoindentation and nanogrinding

Indenter radius effect on mechanical response of a-(11–20), c-(0001), and m-(-1100) plane GaN single crystals in nanoindentation: A molecular dynamics study