P- and N-type Surface Charge Transfer Doping of II-VI Group Semiconductor Nanostructures and Their Enhanced Optoelectronic Properties

Zhibin Shao,Zheng Sun,Feifei Xia,Jiansheng Jie
DOI: https://doi.org/10.1364/pv.2015.pth3b.5
2015-01-01
Abstract:II-VI group semiconductors possess superior optoelectronic properties, but usually present unipolar characteristic. It is expected to achieve and control bipolar doping of II-VI group semicondutors and enhance their optoelectronic properties.
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