Abstract:Semiconductor nanocrystals exhibit size-tunable absorption and emission ranging from the ultraviolet (UV) to the near-infrared (NIR) spectral range, high absorption coefficient, and high photoluminescence quantum yield. Effective surface passivation of these so-called quantum dots (QDs) may be achieved by growing a shell of another semiconductor material. The resulting core/shell QDs can be considered as a model system to study and optimize structure/property relations. A special case consists in growing thick shells (1.5 up to few tens of nanometers) to produce "giant" QDs (g-QDs). Tailoring the chemical composition and structure of CdSe/CdS and PbS/CdS g-QDs is a promising approach to widen the spectral separation of absorption and emission spectra (i.e., the Stokes shift), improve the isolation of photogenerated carriers from surface defects and enhance charge carrier lifetime and mobility. However, most stable systems are limited by a thick CdS shell, which strongly absorbs radiation below 500 nm, covering the UV and part of the visible range. Modification of the interfacial region between the core and shell of g-QDs or tuning their doping with narrow band gap semiconductors are effective approaches to circumvent this challenge. In addition, the synthesis of g-QDs composed of environmentally friendly elements (e.g., CuInSe2/CuInS2) represents an alternative to extend their absorption into the NIR range. Additionally, the band gap and band alignment of g-QDs can be engineered by proper selection of the constituents according to their band edge positions and by tuning their stoichiometry during wet chemical synthesis. In most cases, the quasi-type II localization regime of electrons and holes is achieved. In this type of g-QDs, electrons can leak into the shell region, while the holes remain confined within the core region. This electron-hole spatial distribution is advantageous for optoelectronic devices, resulting in efficient electron-hole separation while maintaining good stability. This Account provides an overview of emerging engineering strategies that can be adopted to optimize structure/property relations in colloidal g-QDs for efficient photon management or charge separation/transfer. In particular, we focus on our recent contributions to this rapidly expanding field of research. We summarize the design and synthesis of a variety of colloidal g-QDs with the aim of tuning the optical properties, such as absorption/emission in a wide region of the solar spectrum, which allows enlargement of their Stokes shift. We also describe the band alignment within these systems, charge carrier dynamics, and charge transfer from g-QDs into semiconducting oxides. We show how these tailored g-QDs may be used as active components in luminescent solar concentrators, photoelectrochemical cells for hydrogen generation, QD-sensitized solar cells and optical nanothermometers. In each case, we aim at providing insights on structure/property relationships and on how to optimize them toward improving device performance. Finally, we describe perspectives for future work, sketching new directions and opportunities in this field of research at the intersection between chemistry, physics, materials science and engineering.

Doping of Colloidal Nanocrystals for Optimizing Interfacial Charge Transfer: A Double-Edged Sword

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Interface Optimization of Metal Quantum Dots/Polymer Nanocomposites and Their Properties: Studies of Multi-Functional Organic/Inorganic Hybrid

Heterovalent Doping in Colloidal Semiconductor Nanocrystals: Cation-Exchange-Enabled New Accesses to Tuning Dopant Luminescence and Electronic Impurities.

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Cation Coordination Reactions on Nanocrystals: Surface/interface, Doping Control and Advanced Photocatalysis Applications (conference Presentation)

Heavily Doped Semiconductor Nanocrystal Quantum Dots

Research Progress in Solution-Based Synthesis of Doped Colloidal Semiconductor Nanocrystals

Graded Doping for Enhanced Colloidal Quantum Dot Photovoltaics

Charge Transfer from Quantum-Confined 0D, 1D, and 2D Nanocrystals

The Interface Microenvironment Mediates the Emission of a Semiconductor Nanocluster Via Surface-Dopant-involving Direct Charge Transfer.

Doped Semiconductor Nanomaterials

Solvent-Based Atomistic Theory for Doping Colloidal-Synthesized Quantum Dots Via Cation Exchange

Doped semiconductor nanomaterials.

Structure/Property Relations in “giant” Semiconductor Nanocrystals: Opportunities in Photonics and Electronics

Solution Prepared O-doped ZnS Nanocrystals: Structure Characterization, Energy Level Engineering and Interfacial Application in Polymer Solar Cells

Tuning near-gap electronic structure, interface charge transfer and visible light response of hybrid doped graphene and Ag3PO4 composite: Dopant effects

Doped Colloidal ZnO Nanocrystals

"Intact" Carrier Doping by Pump-Pump-Probe Spectroscopy in Combination with Interfacial Charge Transfer: A Case Study of CsPbBr 3 Nanocrystals.

Tuning near-gap electronic structure, interface charge transfer and visible light response of hybrid doped graphene and Ag 3 PO 4 composite: Dopant effects

Heterovalent-Doping-Enabled Efficient Dopant Luminescence and Controllable Electronic Impurity Via a New Strategy of Preparing II-VI Nanocrystals.