Electrically induced colossal capacitance enhancement in LaAlO 3 /SrTiO 3 heterostructures

Shuxiang Wu,Guangheng Wu,Jian Qing,Xiang Zhou,Dinghua Bao,Guowei Yang,Shuwei Li
DOI: https://doi.org/10.1038/am.2013.48
IF: 10.761
2013-01-01
NPG Asia Materials
Abstract:The demonstration of a tunable conductivity for the LaAlO 3 /SrTiO 3 interfaces by field effect drew significant attention to the development of oxide-based electronics. The increase in the gate capacitance of the LaAlO 3 /SrTiO 3 -based field-effect transistor is particularly important for conductivity modulation and the development of logic devices. Here, we demonstrate the annihilation of quantum capacitance and colossal capacitance enhancement (approximately 1000%) in LaAlO 3 /SrTiO 3 heterostructures by DC gate voltage at room temperature, which we attribute to the motion of oxygen vacancies through the thickness of the LaAlO 3 layer. These capacitor devices will provide a platform for the further development and application of metal-oxide-semiconductor transistors.
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