Organic Field-Effect Transistor Nonvolatile Memories: from Fundamental Understanding to Prototype Applications (conference Presentation)
Sui-Dong Wang
DOI: https://doi.org/10.1117/12.2275575
2017-01-01
Abstract:Organic nonvolatile memories can be key components toward future low-cost, light-weight, flexible and portable electronic products. The memories based on organic field-effect transistors (OFETs) possess advantages of nondestructive reading, capability to integrate data processing and storage, and compatibility with various substrates. OFET nonvolatile memories face the challenge of simultaneously achieving large memory window, high air stability, long retention time and good rewritable endurance. We firstly elucidate the charge trapping/detrapping mechanism in the memories by a variety of approaches [1-9], including (1) in-situ surface potential mapping, (2) design and tailoring of nano-floating-gate, (3) characterization on memory ambient stability, (4) light response of memory behaviors and (5) probing of current transition point. The charge trapping/detrapping mechanism turns out to be a complex process dependent on both external electrical/optical fields and internal material properties. Secondly, the OFET nonvolatile memories are demonstrated to be promising in the applications of multibit data storage and solar-blind photodetection. References: [1] Wang, S.; Gao, X.; Zhong, Y. N.; Zhang, Z. D.; Xu, J. L.; Wang, S. D. Appl. Phys. Lett. 2016, 109, 023301. [2] Liu, J.; Wang, C. H.; Liu, C. H.; Li, Q. L.; Gao, X.; Wang, S. D. Adv. Electron. Mater. 2016, 2, 1500349. [3] Zhang, J. Y.; Liu, L. M.; Gao, X.; Liu, C. H.; Liu, J.; Dong, B.; Wang, S. D. Org. Electron. 2015. 25, 324-328. [4] Cui, Z. Q.; Wang, S.; Chen, J. M.; Gao, X.; Dong, B.; Chi, L. F.; Wang, S. D. Appl. Phys. Lett. 2015. 106, 123303. [5] Liu, J.; Liu, C. H.; She, X. J.; Sun, Q. J.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2014. 105, 163302. [6] Gao, X.; Liu, C. H.; She, X. J.; Li, Q. L.; Liu, J.; Wang, S. D. Org. Electron. 2014. 15, 2486-2491. [7] She, X. J.; Liu, J.; Zhang, J. Y.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2013. 103, 143302. [8] She, X. J.; Liu, C. H.; Zhang, J. Y.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2013. 102, 053303. [9] Gao, X.; She, X. J.; Liu, C. H.; Sun, Q. J.; Liu, J.; Wang, S. D. Appl. Phys. Lett. 2013. 102, 023303.