Abstract:The aggressive scaling of integrated circuits requires both nanoscale device channels and interconnects. The current Cu interconnects suffer from the limitations of both a nonlinear increase in the resistivity and diminishing current-carrying capacity with scaling down below 20 nm. Here, we evaluated the electrical characteristics of ZrTe3 nanoribbons, which are representative of a special type of quasi-one-dimensional (1D)/two-dimensional (2D) van der Waals materials, as a possible alternative of Cu for next-generation interconnects. The metallic ZrTe3 nanoribbons with different dimensions, which were obtained by exfoliation from the high-quality bulk ZrTe3 single crystals synthesized via chemical vapor deposition (CVT) approach, show both size-independent resistivity with high stability at a low electric field and high breakdown current density at a high electric field. A nonlinear increase of breakdown current density was further revealed with a maximum of ∼144 MA/cm2 for 5 nm ZrTe3 nanoribbons by the finite element simulation. Our investigation features the promise of ZrTe3 nanoribbons as the possible alternative of Cu for the next-generation interconnects.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00659.See the supplementary material for the details on the characterization of ZrTe3 bulk and nanoribbons, the electrical characterization of the same ZrTe3 nanoribbon device before and after Raman characterization, the detailed finite element simulation of breakdown process of ZrTe3 nanoribbons, the SEM observation of typical failed ZrTe3 nanoribbons, and contact resistance (Rc) of ZrTe3 nanoribbons with different widths and thicknesses (PDF)This article has not yet been cited by other publications.

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