Evaluating the Electrical Characteristics of Quasi-One-Dimensional ZrTe3 Nanoribbon Interconnects

Xiaokun Wen,Wenyu Lei,Liangyi Ni,Li Yang,Pengzhen Zhang,Yuan Liu,Haixin Chang,Wenfeng Zhang

DOI: https://doi.org/10.1021/acsaelm.1c00659

IF: 4.494

2021-01-01

ACS Applied Electronic Materials

Abstract:The aggressive scaling of integrated circuits requires both nanoscale device channels and interconnects. The current Cu interconnects suffer from the limitations of both a nonlinear increase in the resistivity and diminishing current-carrying capacity with scaling down below 20 nm. Here, we evaluated the electrical characteristics of ZrTe3 nanoribbons, which are representative of a special type of quasi-one-dimensional (1D)/two-dimensional (2D) van der Waals materials, as a possible alternative of Cu for nextgeneration interconnects. The metallic ZrTe3 nanoribbons with different dimensions, which were obtained by exfoliation from the high-quality bulk ZrTe3 single crystals synthesized via chemical vapor deposition (CVT) approach, show both size-independent resistivity with high stability at a low electric field and high breakdown current density at a high electric field. A nonlinear increase of breakdown current density was further revealed with a maximum of similar to 144 MA/cm(2) for 5 nm ZrTe3 nanoribbons by the finite element simulation. Our investigation features the promise of ZrTe3 nanoribbons as the possible alternative of Cu for the nextgeneration interconnects.