Abstract:In this paper, by contacting a monolayer MoSe2 with a 2D ferromagnetic semiconductor Cr2Ge2Te6, a novel spin‐valley functional device that exhibits both electrical and magnetic tunability is demonstrated. This provides a new physical knob that may effectively manipulate the spin‐valley polarization in the device context. The emergence of atomically thin valleytronic semiconductors and 2D ferromagnetic materials is opening up new technological avenues for future information storage and processing. A key fundamental challenge is to identify physical knobs that may effectively manipulate the spin‐valley polarization, preferably in the device context. Here, a novel spin functional device that exhibits both electrical and magnetic tunability is fabricated, by contacting a monolayer MoSe2 with a 2D ferromagnetic semiconductor Cr2Ge2Te6. Remarkably, the valley‐polarization of MoSe2 is found to be controlled by a back‐gate voltage with an appreciably enlarged valley splitting rate. At fixed gate voltages, the valley‐polarization exhibits magnetic‐field and temperature dependence that corroborates well with the intrinsic magnetic properties of Cr2Ge2Te6, pointing to the impact of magnetic exchange interactions. Due to the interfacial arrangement, the charge‐carrying trion photoemission predominates in the devices, which may be exploited to enable drift‐based spin‐optoelectronic devices. These results provide new insights into valley‐polarization manipulation in transition metal dichalcogenides by means of ferromagnetic semiconductor proximitizing and represent an important step forward in devising field‐controlled 2D magneto‐optoelectronic devices.

Electrical Control of Ultra-long Spin-Valley Polarization of Trions in Monolayer Molybdenum Ditelluride

Electrical Control of Valley Polarization in Monolayer Molybdenum Ditelluride Via Exciton-Trion Interactions

Trion Valley Polarization Dynamics in Electrically-Gated Monolayer Molybdenum Ditelluride

Prolonging valley polarization lifetime through gate-controlled exciton-to-trion conversion in monolayer molybdenum ditelluride

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Valley Polarization of Trions and Magnetoresistance in Heterostructures of MoS2 and Yttrium Iron Garnet

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Trion Valley Coherence in Monolayer Semiconductors

Giant and tunable valley degeneracy splitting in MoTe2

Long-Lived Valley Polarization of Intra-Valley Trions in Monolayer WSe2

Valley polarization of trions in monolayer MoSe$_2$ interfaced with bismuth iron garnet

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Anomalous valley polarization in monolayer MoSe2

Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Long-Lived Nanosecond Spin Relaxation And Spin Coherence Of Electrons In Monolayer Mos2 And Ws2

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

Manipulating Valley-Polarized Photoluminescence of MoS2 Monolayer at off Resonance Wavelength with a Double-Resonance Strategy

Valleytronics in bulk MoS 2 with a topologic optical field