Online Temperature Measurement Method for SiC MOSFET Device Based on Gate Pulse
Xianwei Meng,Meng Zhang,Shiwei Feng,Yidan Tang,Yamin Zhang
DOI: https://doi.org/10.1109/tpel.2024.3351169
IF: 5.967
2024-04-01
IEEE Transactions on Power Electronics
Abstract:In this article, a new online temperature measurement method for silicon carbide power metaloxidesemiconductor field-effect transistors (mosfets) is proposed that uses the linear relationship between the drainsource current (Ids) and the temperature of power electronic devices. The temperature-sensitive characteristics of the transfer characteristic curve of these mosfets are studied. The results show that, under different applied gate voltages, the effects of temperature on the change in the Ids are different; under the same gate voltage, the drainsource current of each device maintains a good linear relationship with the temperature, which can be used to perform the accurate junction temperature measurements of power mosfets. Based on this characteristic, by superimposing a pulse on the gate, characterizing the instantaneous current produced by this superimposed pulse, and combining this characteristic with the relationship between the Ids change and temperature, detection of the device's operating temperature under actual working conditions is realized. Furthermore, a related circuit is designed to reduce the influence of changes in the electrical bias on the system stability during temperature measurements. In addition, the measurement results are verified via infrared thermal imaging, and the results show that the proposed method has good practicability.
engineering, electrical & electronic