Parasitic Effect Degrading Cascode LNA Circuits with 0.18<Emphasis Type="Italic">μ</Emphasis>m CMOS Process for 2.4GHz RFID Applications

Mu-Chun Wang,Hsin-Chia Yang,Ren-Hau Yang
DOI: https://doi.org/10.1007/978-3-642-21697-8_71
2011-01-01
Abstract:Miniaturizing chip circuits in IC design is one of chief targets to promote chip production. However, accompanying the parasitic capacitance perhaps degrades the circuit performance. Here, a cascode low-noise amplifier (LNA) circuit incorporating parasitic capacitance of passive inductors was designed at 2.4GHz carrier frequency with low-cost and high-integration 0.18μm CMOS process. The Advanced Design System (ADS) software was used to probe the noise or power loss of LNA. The simulated results demonstrate the forward voltage gain is 14.289 dB, the input return loss is -11.027 dB, the output return loss is -4.240 dB, the reverse isolation is -14.121 dB, the minimum noise figure is 0.918 dB and the 3-dB gain bandwidth is 320 MHz. These interesting parameters verify that this contrived LNA with ultra-low noise performance is indeed suitable to be a candidate in the whole receiver integration of RFID applications even though the parasitic effect was considered.
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