Large Magnetoresistance in Silicon at Room Temperature Induced by Onsite Coulomb Interaction
Zhaochu Luo,Hong-Guang Piao,Andrew V. Brooks,Xiaofeng Wang,Jiaojiao Chen,Chengyue Xiong,Fuhua Yang,Xiangrong Wang,Xiao-Guang Zhang,Xiaozhong Zhang
DOI: https://doi.org/10.1002/aelm.201700186
IF: 6.2
2017-01-01
Advanced Electronic Materials
Abstract:Magnetoresistance (MR), as a key property in magnetic-field sensing and magnetic storage, has been a long-term focus. In particular in silicon, which is the mainstream semiconductor of information technology, the MR phenomenon has attracted a lot of attention because of its fundamental interest and broad application potential. Here, a large MR in silicon, which is associated with impurity onsite Coulomb interaction and space charge limited current (SCLC), is observed at room temperature. In the presence of SCLC, delocalization of electrons in doubly occupied traps with a strong onsite Coulomb interaction leads to an S-shape negative differential conductance (SNDC). A large room temperature MR (>10(3)% at 0.05 T) appears around the SNDC region. These findings will help to design high-performance silicon-based magnetic device (e.g., magnetic switch devices, magnetic logic devices) and pave the way for magnetoelectronics in silicon.