Visible-light photovoltaic effect in high-temperature ferroelectric BaFe4O7

Ganghua Zhang,Jingshan Hou,Mingjun Zhu,Guoquan Huang,Dezeng Li,Yongzheng Fang,Tao Zeng

DOI: https://doi.org/10.1039/d0tc03937c

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:A new high-temperature ferroelectric BaFe4O7 without volatile elements has been presented with a visible-light photovoltaic effect.

What problem does this paper attempt to address?

Visible-light photovoltaic effect in multiferroic Bi2Fe4O9 thin film

Tao Zeng,Zhanqiang Liu,Guoquan Huang,Jingshan Hou,Ganghua Zhang

DOI: https://doi.org/10.1016/j.matlet.2021.131411

IF: 3

2022-02-01

Materials Letters

Abstract:Ferroelectric photovoltaics have attracted extremely attention due to their unique internal electric field driven by the polarization. Herein, the multiferroic Bi2Fe4O9 microcrystals were synthesized via a facile hydrothermal method and Bi2Fe4O9 thin films were prepared by knife coating. The phase purity, morphology and chemical component of the sample were detected by powder XRD, SEM and EDS tests. A visible-light bandgap about 2.13 eV has been revealed in Bi2Fe4O9. An enhanced bulk photovoltaic effect was observed in poled sample (at 30 kV/cm2) with a steady-state photocurrent of 0.62 µA/cm2 and photovoltage of 0.16 V under the standard AM 1.5G illumination. This finding may offer a promising candidate for potential photoelectric devices.

materials science, multidisciplinary,physics, applied
Ultraviolet Photovoltaic Effect in BiFeO3/Nb-SrTiO3 Heterostructure

H. Li,K. X. Jin,S. H. Yang,J. Wang,M. He,B. C. Luo,J. Y. Wang,C. L. Chen,T. Wu

DOI: https://doi.org/10.1063/1.4759049

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:We report on ultraviolet photovoltaic effects in a BiFeO3/Nb-doped SrTiO3 heterostructure prepared by a pulsed laser deposition method. The heterostructure exhibits rectifying behaviors in the temperature range from 80 K to 300 K. The photovoltage of heterostructure is about 0.33 V at T = 80 K when it is illuminated by a KrF excimer laser with a wavelength of 248 nm. The peak photovoltages decrease with increasing the temperature because of the accumulation of photogenerated carriers. Moreover, the peak photovoltages of heterostructure almost linearly increase with an increase of the power density of laser at T = 300 K. The results reveal some properties that may be useful for possible applications in multiferroic photoelectric devices.
Bulk photovoltaic effect in ferroelectrics

Hiroki Matsuo and Yuji Noguchi

DOI: https://doi.org/10.35848/1347-4065/ad442e

IF: 1.5

2024-06-12

Japanese Journal of Applied Physics

Abstract:The bulk photovoltaic (PV) effect in ferroelectric materials has attracted worldwide attention for novel optoelectronic applications utilizing above-bandgap photovoltages, light-polarization-dependent photocurrents, photocurrent generation by terahertz light, etc. One of the drawbacks is its weak photoresponse under visible-light irradiation, and thereby the development of visible-light-active ferroelectrics has been an important issue. In this review, firstly, we introduce the history, mechanisms, and physical features of the bulk PV effect. Secondly, we summarize the properties of representative ferroelectric oxides and two-dimensional nanomaterials. Moreover, we describe a material design for enhancing the visible-light photoresponse based on bandgap tuning and gap-state engineering. Finally, we discuss future prospects of ferroelectric PV devices with a high conversion efficiency.

physics, applied
New High T-C Multiferroics Kbife2o5 with Narrow Band Gap and Promising Photovoltaic Effect

Ganghua Zhang,Hui Wu,Guobao Li,Qingzhen Huang,Chongyin Yang,Fuqiang Huang,Fuhui Liao,Jianhua Lin

DOI: https://doi.org/10.1038/srep01265

IF: 4.6

2013-01-01

Scientific Reports

Abstract:Intrinsic polarization of ferroelectrics (FE) helps separate photon-generated charge carriers thus enhances photovoltaic effects. However, traditional FE with transition-metal cations (M) of d0 electron in MO6 network typically has a band gap (Eg) exceeding 3.0 eV. Although a smaller Eg (2.6 eV) can be obtained in multiferroic BiFeO3, the value is still too high for optimal solar energy applications. Computational “materials genome” searches have predicted several exotic MO6 FE with Eg < 2.0 eV, all thus far unconfirmed because of synthesis difficulties. Here we report a new FE compound with MO4 tetrahedral network, KBiFe2O5, which features narrow Eg (1.6 eV), high Curie temperature (Tc ~ 780 K) and robust magnetic and photoelectric activities. The high photovoltage (8.8 V) and photocurrent density (15 μA/cm2) were obtained, which is comparable to the reported BiFeO3. This finding may open a new avenue to discovering and designing optimal FE compounds for solar energy applications.
Photovoltaic effect and photopolarization in Pb[(Mg1/3Nb2/3)0.68Ti0.32]O3 crystal

A. S. Makhort,F. Chevrier,D. Kundys,B. Doudin,B. Kundys

DOI: https://doi.org/10.48550/arXiv.1801.04870

2018-01-15

Materials Science

Abstract:Ferroelectric photovoltaic materials are an alternative to semiconductor-based photovoltaics and offer the advantage of above bandgap photovoltage generation. However, there are few known compounds, and photovoltaic efficiencies remain low. Here, we report the discovery of a photovoltaic effect in undoped lead magnesium niobate-lead titanate crystal and a significant improvement in the photovoltaic response under suitable electric fields and temperatures. The photovoltaic effect is maximum near the electric-field-driven ferroelectric dipole reorientation, and increases threefold near the Curie temperature. Moreover, at ferroelectric saturation, the photovoltaic response exhibits clear remanent and transient effects. The transient-remanent combinations together with electric and thermal tuning possibilities indicate photoferroelectric crystals as emerging elements for photovoltaics and optoelectronics, relevant to all-optical information storage and beyond.
Bulk Photovoltaic Effect in High-Temperature Lead-Halide Molecular Ferroelectric [C4N2H14][PbI4]

Ganghua Zhang,Zhibo Chen,Jinrong Wen,Jingshan Hou,Shu Chen,Yongzheng Fang,Yi Ren

DOI: https://doi.org/10.1021/acsami.4c11534

2024-10-09

Abstract:Hybrid organic-inorganic molecular ferroelectrics (HOIMFs) have garnered significant attention owing to their potential applications in optoelectronic and spintronic devices. However, HOIMFs with high Curie temperature (Tc), narrow bandgap (Eg), excellent stability, and high breakdown voltage are still very rare. Herein, we present a novel lead-halide molecular ferroelectric, (1,4-butanediammonium)PbI4 (1), synthesized hydrothermally. 1 exhibits a ferroelectric-to-paraelectric phase transition with a high Curie temperature of 485 K, a room temperature ferroelectric hysteresis loop with a robust saturation polarization of 3.9 μC/cm2 and strong coercivity of 33 kV/cm, and a typical semiconductor behavior with a direct bandgap of 2.28 eV. Switchable photovoltaic effect was observed in 1-based device with a fast response time of ∼2 ms and high breakdown electric field of 80 kV/cm. Dramatically enhanced photovoltaic performance has been achieved by manipulating the ferroelectric polarization, resulting in a maximum photovoltage of Voc ∼ 0.84 V and a photocurrent of Jsc ∼ 33.31 nA/cm2 under standard AM 1.5 G illumination. This study offers a bright avenue for advancing high-Tc lead-halide molecular ferroelectrics with promising potentials in photodetectors, data storage, and logical switching devices.
Controllable Photovoltaic Effect of Microarray Derived from Epitaxial Tetragonal BiFeO3 Films

Zengxing Lu,Peilian Li,Jian-guo Wan,Zhifeng Huang,Guo Tian,Danfeng Pan,Zhen Fan,Xingsen Gao,Jun-ming Liu

DOI: https://doi.org/10.1021/acsami.7b06535

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Recently, the ferroelectric photovoltaic (FePV) effect has attracted great interest due to its potential in developing optoelectronic devices such as solar cell and electric-optical sensors. It is important for actual applications to realize a controllable photovoltaic process in ferroelectric-based materials. In this work, we prepared well-ordered microarrays based on epitaxially tetragonal BiFeO3 (T-BFO) films by the pulsed laser deposition technique. The polarization-dependent photocurrent image was directly observed by a conductive atomic force microscope under ultraviolet illumination. By choosing a suitable buffer electrode layer and controlling the ferroelectric polarization in the T-BFO layer, we realized the manipulation of the photovoltaic process. Moreover, based on the analysis of the band structure, we revealed the mechanism of manipulating the photovoltaic process and attributed it to the competition between two key factors, i.e., the internal electric field caused by energy band alignments at interfaces and the depolarization field induced by the ferroelectric polarization in T-BFO. This work is very meaningful for deeply understanding the photovoltaic process of BiFeO3-based devices at the microscale and provides us a feasible avenue for developing data storage or logic switching microdevices based on the FePV effect.
Preparation and Photostriction Properties of BiFeO3-BaTiO3 Ceramics

Zheng, Zewei

DOI: https://doi.org/10.1007/s11595-024-2973-8

2024-09-23

Journal of Wuhan University of Technology-Mater Sci Ed

Abstract:Under illumination by 405, 520 and 655 nm monochromatic visible light (light intensity of 30 kW/m 2 ), large photostriction (Δ L/L ) of 0.19%, 0.13% and 0.26% for 67BiFeO 3 -33BaTiO 3 (67BF-33BT) lead-free ferroelectric ceramics are obtained, respectively. By studying the ferroelectric and photoelectric properties in conjunction with in situ Raman spectroscopy, it is found that the photostrictive effect of 67BF-33BT is not caused by the electrical strain induced by abnormal photovoltaic voltage, but related to the optical induced oxygen octahedral distortion. The 67BF-33BT lead-free ferroelectric material with excellent photostrictive response in the visible light region is expected to play an important role in the field of optical drive electromechanical devices.

materials science, multidisciplinary
Boosted Photocurrent via Heating BiFeo3 Thin Film for UV Photodetector at Wide Temperature Range

Lili Yang,Xinjie Wang,Liang Bai,Lan Xu,Ya Yang

DOI: https://doi.org/10.1002/adfm.202303408

IF: 19

2023-05-10

Advanced Functional Materials

Abstract:A self‐powered LNO/BFO/ITO UV photodetector is constructed on flexible mica substrate by sol–gel method. The sensor exhibits enhanced photocurrent over a wide temperature range (33–130 °C) and outperforms bulk materials photocurrent. It provides favorable guidance for the further development and application of ferroelectric thin films. The current research on ferroelectric photovoltaic materials is concentrated on enhancing the output photocurrent. As solar cells operate at high temperatures, it is crucial to take into account the effect of increasing temperatures on ferroelectric photovoltaics. In this study, an LNO (lanthanum nickelate, LaNiO3)/BFO (bismuth ferrate, BiFeO3)/ITO (indium tin oxide) device is constructed on a mica substrate by sol–gel method. The device achieves output photocurrent enhancement at a wide temperature range (33–183 °C), with the largest photocurrent enhancement at 130 °C, which is 178% relative to room temperature, and the output power is also increased by 9.88 times. At the same time, compared with BFO bulk, it is found that the performance of BFO film is always higher than that of bulk in the test temperature range, and the output photocurrent of BFO film at room temperature is 104 times higher than that of bulk. This article investigates the effect of high temperatures on ferroelectric photovoltaics and also provides a strategy for enhancing the photovoltaic performance of ferroelectric films, providing guidance for future applications of ferroelectric films in flexible solar cells and other applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Bulk Photovoltaic Effect in High-Temperature Lead-Halide Molecular Ferroelectric

Ganghua Zhang,Zhibo Chen,Jinrong Wen,Jingshan Hou,Shu Chen,Yongzheng Fang,Yi Ren

DOI: https://doi.org/10.1021/acsami.4c11534

IF: 9.5

2024-09-26

ACS Applied Materials & Interfaces

Abstract:Hybrid organic-inorganic molecular ferroelectrics (HOIMFs) have garnered significant attention owing to their potential applications in optoelectronic and spintronic devices. However, HOIMFs with high Curie temperature (T(c)), narrow bandgap (E(g)), excellent stability, and high breakdown voltage are still very rare. Herein, we present a novel lead-halide molecular ferroelectric, (1,4-butanediammonium)PbI(4) (1), synthesized hydrothermally. 1 exhibits a ferroelectric-to-paraelectric phase...

materials science, multidisciplinary,nanoscience & nanotechnology
Bulk photovoltaic effect in BaTiO$_3$-based ferroelectric oxides: An experimental and theoretical study

Subhajit Pal,S. Muthukrishnan,Banasree Sadhukhan,Sarath N.,D. Murali,Pattukkannu Murugavel,Sarath N. V

DOI: https://doi.org/10.48550/arXiv.2104.03134

2021-04-07

Materials Science

Abstract:The bulk photovoltaic effect exhibited by the non-centrosymmetric system gains research interest due to the observed large open-circuit voltage. The ferroelectric systems exhibiting anomalous photovoltaic effect are mostly crystallized with multiphase coexistence. Hence, the computational difficulty in building a multi-phase system restricts the detailed photovoltaic studies through phenomenological and shift current theory. In this work, ferroelectric Ba$_{1- x}$(Bi$_{0.5}$K$_{0.5}$)$_x$TiO$_3$ (BBKT) oxide is designed to crystallize in single-phase tetragonal symmetry with improved polarization characteristics, and it is found to exhibits large PV response. Both experimental and theoretical studies on BBKT samples reveal ~18% reduction in bandgap compared to the parent BaTiO$_3$. Short-circuit current measured as a function of light intensity and light polarization angle reveal linear and sinusoidal response, respectively. The observed features are in accordance with phenomenological theory. Remarkably, x = 0.125 sample displays ~8 times higher open-circuit voltage (7.39 V) than the parent compound. The enhanced PV effect is attributed to the large shift current along z-direction as evidenced from the additional charge-center shift of valence band occupied by O-2p orbital and conduction band occupied by Bi-6p orbital. Notably, the degenerate Bi-p$_z$ state at conduction band minimum in BBKT favours the large shift current response in the z-direction.
Non‐stoichiometric BZT‐BCT ferroelectrics with visible/near‐infrared photoresponse for broadband Photodetection

Lu Wang,Chen Chen,Xiang He,Kui Yao,Zhiguo Yi

DOI: https://doi.org/10.1111/jace.18739

IF: 4.186

2022-08-31

Journal of the American Ceramic Society

Abstract:The bulk photovoltaic effect in ferroelectric materials exhibits great potential in photoelectric applications. However, their photoresponse is generally limited to the UV region due to the wide bandgap feature of most perovskite ferroelectric materials, while the narrowing of bandgap is often accompanied by the degradation or even extinction of the ferroelectric polarization. Herein, 0.5Ba(Ti0.8Zr0.2)O3‐0.5(Ba0.7Ca0.3)TiO3 (BZT‐BCT) with bandgap of 2.4 eV arising from the existence of Ti3+ is prepared, and then titanium vacancies are introduced to BZT‐BCT ferroelectric solid solutions through B‐site off‐stoichiometry (0.5Ba(Ti0.8Zr0.2)O3‐0.5(Ba0.7Ca0.3)Ti1‐x%O3, BZT‐BCT1‐x%) to further tune the bandgap. Lowest bandgap of 2.1 eV with near‐infrared absorption is obtained for BZT‐BCT0.990 composition. Moreover, both the ferroelectricity and piezoelectricity (Pr = 14.3 μC/cm2, d33 = 415 pC/N) are well maintained after mitigating the effect of the increased oxygen vacancies associated with Ti‐deficiency on the spontaneous polarization by oxygen‐annealing treatment. More specifically, the oxygen‐annealing BZT‐BCT0.985 composition, showing at least 2.4‐fold photovoltage and 2.2‐fold photocurrent of the pristine BZT‐BCT, exhibits excellent transient pyroelectric current and stable photovoltaic current under xenon, NIR and monochromatic visible lights. The photoelectric device based on the oxygen‐annealing BZT‐BCT0.985 ceramic performs wide‐spectrum photodetection properties from 405 nm light to NIR light, which makes it a potential candidate for self‐powered photodetector applications. This article is protected by copyright. All rights reserved

materials science, ceramics
Anomalous photovoltaic effect in Na0.5Bi0.5TiO3-based ferroelectric ceramics based on domain engineering

Xinxiang Yang,Xing Gao,Shan Zhang,Jun Zhao,Xinlei Zhang,Xin Song,Chunxiao Lu,Yong Li,Liwen Zhang,Xihong Hao

DOI: https://doi.org/10.1016/j.jmat.2023.10.010

IF: 8.589

2023-11-01

Journal of Materiomics

Abstract:The anomalous photovoltaic (APV) effect is promising for high-performance ferroelectric materials and devices in photoelectric applications. However, it is a challenge how to tune the APV effect by utilizing the characteristic structure of ferroelectrics. Here, a domain engineering strategy is proposed to enhance the APV effect in lead-free 0.88(Na0.5Bi0.5TiO3)-0.12(Ba1–1.5x Sm x TiO3) (NBT-BST) ferroelectric ceramics. By tuning the domain size based on Sm3+ doping, a maximum open-circuit voltage (V OC) of 18.1 V is obtained when Sm3+ content is 0.75%, which is much larger than its bandgap (E g). The mechanism of this large V OC originates from the multiple positive effects induced by the small-size domain, where decreasing domain size enhances ferroelectric polarization and net interface barrier potential, leading to a large driving electric field. Moreover, the APV effect exhibits a giant temperature sensitivity due to the dramatic evolution of small-size domain in the temperature field. This work sheds light on the exploration of ferroelectrics with APV effect and inspires their future high-performance optoelectronic device applications.

materials science, multidisciplinary,chemistry, physical,physics, applied
Giant Electrocaloric Effect in Ferroelectric Ultrathin Films at Room Temperature Mediated by Flexoelectric Effect and Work Function

Ye Qiu,Huaping Wu,Jie Wang,Jia Lou,Zheng Zhang,Aiping Liu,Takayuki Kitamura,Guozhong Chai

DOI: https://doi.org/10.1063/1.4992811

IF: 2.877

2017-01-01

Journal of Applied Physics

Abstract:In ferroelectric ultrathin films, built-in electric fields are often present due to the flexoelectric effect and the difference of work functions at asymmetric electrodes, which may change the properties of the materials. In this paper, the influence of build-in electric fields induced by flexoelectric effect and/or work function difference on the misfit strain-temperature phase diagrams, and the electrocaloric properties of epitaxial BaTiO3 ultrathin films are investigated by using an extended nonlinear thermodynamic theory. It is found that the flexoelectric effect, i.e., the coupling of polarization and strain gradient, changes the misfit strain-temperature phase diagrams notably, in which the phases with out-of-plane polarizations increase due to the presence of a built-in field. The electrocaloric properties are remarkably enhanced when the built-in fields induced by both the flexoelectric effect and work function difference are considered. In particular, a giant adiabatic temperature change of 7.89 K in ultrathin Pt/BaTiO3/SrRuO3 capacitors at 460 K is predicted. Moreover, it is demonstrated that the peak of adiabatic temperature change versus working temperature is shifted from a high temperature to room temperature, suggesting that ferroelectric ultrathin films with asymmetric electrodes and strain gradient are promising candidates for room temperature refrigeration.
Above-bandgap voltages from ferroelectric photovoltaic devices

S. Y. Yang,J. Seidel,S. J. Byrnes,P. Shafer,C.-H. Yang,M. D. Rossell,P. Yu,Y.-H. Chu,J. F. Scott,J. W. Ager III,L. W. Martin,R. Ramesh

DOI: https://doi.org/10.1038/NNANO.2009.451

IF: 38.3

2010-01-01

Nature Nanotechnology

Abstract:In conventional solid-state photovoltaics, electron–hole pairs are created by light absorption in a semiconductor and separated by the electric field spaning a micrometre-thick depletion region. The maximum voltage these devices can produce is equal to the semiconductor electronic bandgap. Here, we report the discovery of a fundamentally different mechanism for photovoltaic charge separation, which operates over a distance of 1–2 nm and produces voltages that are significantly higher than the bandgap. The separation happens at previously unobserved nanoscale steps of the electrostatic potential that naturally occur at ferroelectric domain walls in the complex oxide BiFeO 3 . Electric-field control over domain structure allows the photovoltaic effect to be reversed in polarity or turned off. This new degree of control, and the high voltages produced, may find application in optoelectronic devices.
Enhanced photovoltaic-pyroelectric coupled effect of BiFeO3/Au/ZnO heterostructures

Yaju Zhang,Huanxin Su,Hui Li,Zhongshuai Xie,Yuanzheng Zhang,Yan Zhou,Liya Yang,Haowei Lu,Guoliang Yuan,Haiwu Zheng

DOI: https://doi.org/10.1016/j.nanoen.2021.105968

IF: 17.6

2021-07-01

Nano Energy

Abstract:The photovoltaic properties of ferroelectric films and ferroelectric-semiconductor heterostructures have been extensively studied due to their application prospects in photodetection, energy conversion and nonvolatile storage. However, light-induced pyroelectric effect accompanied by the photovoltaic effect of ferroelectric-semiconductor heterostructures lacks sufficient attention. Herein, BiFeO3 (BFO)/Au/ZnO heterostructures are constructed by controlling sputtering time of Au nanoparticles and the regulation mechanism of integrating pyroelectric and photovoltaic effects is explored. The short-circuit photocurrent density of the optimal BFO/Au/ZnO heterostructures is nearly 1.4 times that of BFO/ZnO heterostructures under 405 nm light illumination. Moreover, BFO/Au/ZnO heterostructures broaden the response wavelength from 360 nm to 1060 nm light beyond the bandgap limitation. Compared with merely the photovoltaic effect found in BFO films and BFO/ZnO heterostructures, BFO/Au/ZnO heterostructures display the photovoltaic-pyroelectric coupled effect that is associated with light-induced temperature variation rate and band alignment by introducing Au nanoparticles into BFO and ZnO layers. The implementation of the photovoltaic-pyroelectric coupled effect endows BFO/Au/ZnO heterostructures with outstanding photoelectric performances modulated by self-polarization phenomenon and band bending. This work not only provides in-depth understanding about the photovoltaic-pyroelectric coupled effect of ferroelectric-metal-semiconductor heterostructures, but also provides an effective and facile route to design high-performance photoelectric related devices with wideband response.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Switchable Photoelectric Response in High-Temperature Leadless Molecular Ferroelectric [C4N2H14][BiI5]

Tianhong Luo,Ganghua Zhang,Jinrong Wen,Zhanqiang Liu,Jingshan Hou,Dezeng Li,Yongzheng Fang

DOI: https://doi.org/10.1021/acs.inorgchem.4c03163

2024-09-30

Abstract:Lead-free molecular ferroelectrics have garnered considerable attention for their promising potential, but such species with narrow band gap and sensitive photoelectric response are yet inadequate. Herein, we demonstrated the bulk ferroelectric photovoltaic effect in a novel lead-free molecular ferroelectric [C4N2H14][BiI5] with a Curie temperature (Tc) of 366 K and a narrow band gap (Eg) of 1.92 eV. The transformation of the crystal structure from the polar space group P21 to the nonpolar space group P21/m was elucidated using single-crystal X-ray diffraction. Room-temperature (RT) hysteresis loop reveals the intrinsic ferroelectricity of [C4N2H14][BiI5] with a relative small coercive field (Ec ∼ 0.27 kV/cm), saturation polarization (Ps ∼ 1.87 μC/cm2), and remanent polarization (Pr ∼ 1.61 μC/cm2). [C4N2H14][BiI5]-based solar device exhibits significant PV effects with a steady-state photocurrent (Jsc) of 3.54 μA/cm2 and a photovoltage (Voc) of 0.34 V under AM 1.5 G illumination, which can be significantly improved by adjusting the ferroelectric polarization, reaching a maximum Jsc of 140 μA/cm2 and Voc of 0.51 V. This work offers a promising avenue for lead-free molecular ferroelectric materials in the field of optoelectronic devices.
Bulk photovoltaic effect in a zero-dimensional room-temperature molecular ferroelectric 1.5

Zhibo Chen,Tianhong Luo,Jinrong Wen,Zhanqiang Liu,Jingshan Hou,Yongzheng Fang,Ganghua Zhang

DOI: https://doi.org/10.1039/d4dt02698e

IF: 4

2024-11-07

Dalton Transactions

Abstract:Non-toxic molecular ferroelectrics have attracted significant interest due to their unique flexibility, low costs, and environmental friendliness. However, the variety of such materials with narrow bandgaps and above room temperature (RT) ferroelectricity is still scarce. Herein, we present a brand-new lead-free molecular ferroelectric [C8N2H22]1.5[Bi2I9] synthesized hydrothermally. [C8N2H22]1.5[Bi2I9] features a zero-dimensional (0D) structure with a polar space group of Pc, as confirmed by single-crystal X-ray diffraction and Second-Harmonic Generation (SHG) analyses. RT hysteresis loop reveals the intrinsic ferroelectricity of [C8N2H22]1.5[Bi2I9] with a spontaneous polarization (Ps) of 1.3 μC/cm2. A visible-light optical bandgap has been confirmed by UV-vis spectrum and theoretical calculation. A notable ferroelectric photovoltaic (PV) effect has been revealed in [C8N2H22]1.5[Bi2I9]-based photoelectric device with an open-circuit voltage (Voc) of 0.39 V and a short-circuit current density (Jsc) of 2.3 μA/cm2 under AM 1.5G illumination. The PV performance can be significantly enhanced by tuning the ferroelectric polarization, achieving a maximum Voc of 0.47 V and Jsc of about 50 μA/cm2. This study offers a novel member of 0D lead-free hybrid organic-inorganic molecular ferroelectric family possessing great promise for optoelectronic devices.

chemistry, inorganic & nuclear
Enhanced photocurrent in ferroelectric Bi0.5Na0.5TiO3 materials via ferro-pyro-phototronic effect

Yuan Liu,Yun Ji,Yanlong Xia,Li Wu,Chris R. Bowen,Ya Yang

DOI: https://doi.org/10.1016/j.nanoen.2022.107312

IF: 17.6

2022-07-01

Nano Energy

Abstract:The photocurrent generated by ferroelectric materials via the photovoltaic effect has latent applications in opto-electronic devices due to the introduction of a polarization-induced charge carrier separation and transport, which is absent in semiconducting p-n junctions. However, the precise mechanism of photocurrent production in photoelectric devices by a range of ferroelectric materials remains a topic of continued interest. Here we report a significant enhancement in the photocurrent of a ferroelectric Bi0.5Na0.5TiO3-based photoelectric device by ferro-pyro-phototronic effect. When compared with the generated photocurrent under illumination alone, the peak and platform photocurrents induced by the simultaneous use of both light and heating can be increased by 131% and 57%, respectively. The increase in photocurrent is found to increase with temperature, where the mechanism of enhancement is associated with the increase in pyroelectric coefficient, photoexcited carrier concentration and carrier mobility at higher operating temperatures. These factors also lead to a rapid response time of 84.2 ms. This work provides guidelines for photocurrent promotion in ferroelectric devices, pushing forward the potential applications of ferroelectric materials for self-powered photodetectors.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Electric-field modulated photovoltaic effect of ferroelectric double-perovskite Bi 2 FeMnO 6 films

Jianjun Lin,Peng Shen,Yuan Liu,Fangyu Yue,Ye Chen,Zhiyong Zhou,Pingxiong Yang,Junhao Chu,Chun-Gang Duan,Lin Sun

DOI: https://doi.org/10.1063/5.0059637

IF: 4

2021-09-06

Applied Physics Letters

Abstract:Ferroelectric perovskite oxide materials for photovoltaics (PV) have received considerable attention for their switchable PV responses and above-bandgap photovoltages as a type of new-generation PV device. Relatively large bandgap and low photocurrent remain major problems for their PV applications. Herein, we report the PV response of ferroelectric double-perovskite Bi2FeMnO6 (BFMO) thin films. It was found that the photocurrent density (Jsc) of a Sn:In2O3 (ITO)/BFMO/SrRuO3 (SRO) thin film device is two orders of magnitude higher than that of BiFeO3, and its power conversion efficiency is about 430 times larger than that of BiFeO3 under AM 1.5G illumination. The built-in electric field near the BFMO/SRO interface, which represents the Schottky contact, leads to the separation of photon-generated carriers. More importantly, the electric poling treatment on the BFMO device can manipulate significantly the magnitude of Jsc, which is independent of the polarization direction. This electric-field modulated PV effect in the poled BFMO device originates from the modulation of the Schottky barrier height at the BFMO/SRO interface. The redistribution of oxygen vacancies after electric poling treatment is mainly responsible for the modulation of the Schottky barrier height.

physics, applied

Visible-light photovoltaic effect in high-temperature ferroelectric BaFe<sub>4</sub>O<sub>7</sub>

Visible-light photovoltaic effect in multiferroic Bi2Fe4O9 thin film

Ultraviolet Photovoltaic Effect in BiFeO3/Nb-SrTiO3 Heterostructure

Bulk photovoltaic effect in ferroelectrics

New High T-C Multiferroics Kbife2o5 with Narrow Band Gap and Promising Photovoltaic Effect

Photovoltaic effect and photopolarization in Pb[(Mg1/3Nb2/3)0.68Ti0.32]O3 crystal

Bulk Photovoltaic Effect in High-Temperature Lead-Halide Molecular Ferroelectric [C4N2H14][PbI4]

Controllable Photovoltaic Effect of Microarray Derived from Epitaxial Tetragonal BiFeO3 Films

Preparation and Photostriction Properties of BiFeO3-BaTiO3 Ceramics

Boosted Photocurrent via Heating BiFeo3 Thin Film for UV Photodetector at Wide Temperature Range

Bulk Photovoltaic Effect in High-Temperature Lead-Halide Molecular Ferroelectric

Bulk photovoltaic effect in BaTiO$_3$-based ferroelectric oxides: An experimental and theoretical study

Non‐stoichiometric BZT‐BCT ferroelectrics with visible/near‐infrared photoresponse for broadband Photodetection

Anomalous photovoltaic effect in Na0.5Bi0.5TiO3-based ferroelectric ceramics based on domain engineering

Giant Electrocaloric Effect in Ferroelectric Ultrathin Films at Room Temperature Mediated by Flexoelectric Effect and Work Function

Above-bandgap voltages from ferroelectric photovoltaic devices

Enhanced photovoltaic-pyroelectric coupled effect of BiFeO3/Au/ZnO heterostructures

Switchable Photoelectric Response in High-Temperature Leadless Molecular Ferroelectric [C4N2H14][BiI5]

Bulk photovoltaic effect in a zero-dimensional room-temperature molecular ferroelectric 1.5

Enhanced photocurrent in ferroelectric Bi0.5Na0.5TiO3 materials via ferro-pyro-phototronic effect

Electric-field modulated photovoltaic effect of ferroelectric double-perovskite Bi 2 FeMnO 6 films