Interfaces and Defect Structures in Epitaxial Heterostructures of YBa2Cu3O7 and PrBa2Cu3O7

C. L. Jia,B. Kabius,H. Soltner,U. Poppe,K. Urban,J. Schubert,Ch. Buchal

DOI: https://doi.org/10.1017/s0424820100173182

1990-01-01

Abstract:For the realization of electronic devices using high-Tc superconductors it is necessary to produce multilayers of superconducting and nonsuperconducting or insulating films. It was suggested by Poppe et al. to prepare epitaxial heterostructures on the basis of superconducting YBa2Cu3O7 and semiconducting PrBa2Cu3O7. Heterostructures with similar composition have also been investigated by other authors. The two materials are isomorphic and have the advantage of a small lattice mismatch.The microstructure of YBa2Cu3O7/PrBa2Cu3O7/YBa2Cu3O7 heterostructures, which have been sputtered epitaxially on SrTiO3 substrates, was examined by high-resolution transmission electron microscopy (HREM), Rutherford backscattering (RBS), and energy-dispersive X-ray analysis (EDX). Measurement of the resistivity vs. temperature of the superconducting layer gave a value of about 90 K for the onset of the superconducting transition. Zero resistance was obtained at temperatures between 80 K and 88 K depending on the specific sample.