Fu Zhang,Boyang Zheng,Amritanand Sebastian,David H. Olson,Mingzu Liu,Kazunori Fujisawa,Yen Thi Hai Pham,Valery Ortiz Jimenez,Vijaysankar Kalappattil,Leixin Miao,Tianyi Zhang,Rahul Pendurthi,Yu Lei,Ana Laura Elías,Yuanxi Wang,Nasim Alem,Patrick E. Hopkins,Saptarshi Das,Vincent H. Crespi,Manh‐Huong Phan,Mauricio Terrones

Abstract:<p>Dilute magnetic semiconductors (DMS), achieved through substitutional doping of spin‐polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto–electric or magneto–optical devices, especially for two‐dimensional (2D) systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room‐temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here, room‐temperature ferromagnetic order obtained in semiconducting vanadium‐doped tungsten disulfide monolayers produced by a reliable single‐step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation, is described. These monolayers develop p‐type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of ~2 at% and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium–vanadium spacings, as supported by transmission electron microscopy, magnetometry, and first‐principles calculations. Room‐temperature 2D‐DMS provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures into the realm of practical application.</p>

A Quaternary van der Waals Ferromagnetic Semiconductor AgVP <sub>2</sub> Se <sub>6</sub>

A Quaternary van der Waals Ferromagnetic Semiconductor AgVP<sub>2</sub>Se<sub>6</sub>

Ultrathin Ferrite Nanosheets for Room-Temperature Two-Dimensional Magnetic Semiconductors.

Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2

Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet

Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor

Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications

Peeling off Nanometer‐Thick Ferromagnetic Layers and Their Van Der Waals Heterostructures

Weak ferromagnetism and magnetoelectric coupling in van der Waals antiferromagnet MnPSe3

Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?

Two-dimensional 1T′ α -VXY (X = S, Se, Te; Y = Cl, Br, I): A multifunctional vanadium chalcohalide family with room-temperature ferromagnetism and sliding ferroelectricity

Realizing Ferromagnetism in a Field‐Effect Transistor Based on VSe 2 Thin Flakes

Ferromagnetism in 2D Vanadium Diselenide

Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions

Two-dimensional Ferromagnetism and Driven Ferroelectricity in Van Der Waals CuCrP2S6

VI3 - a new layered ferromagnetic semiconductor

Nonvolatile Multiferroic Coupling in Van Der Waals Heterostructure

Robust magnetic proximity induced anomalous Hall effect in a room temperature van der Waals ferromagnetic semiconductor based 2D heterostructure

Room-Temperature van der Waals Perpendicular Ferromagnet Through Interlayer Magnetic Coupling

First-principles Study of Magnetic Interactions and Excitations in Antiferromagnetic Van Der Waals Material MPX3(M=Mn, Fe, Co, Ni; X=S, Se).