Abstract:Phase engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoTe2 offers tremendous opportunities in various device applications. However, most of the existing methods so far only address the small-area local phase change or the growth of certain kinds of phases of MoTe2 film by laser irradiation, mechanical strain, or procursor type. Obtaining facile, tunable, reversible, and continuous-phase transition and evolution between different phases in direct growth of large-area, few-layer MoTe2 still remains challenging. Here, we develop a facile method to achieve phase control and transition and report a highly tunable, tellurization velocity-dependent metallic-semiconducting-metallic phase evolution in chemical vapor deposition (CVD) growth of large-area, few-layer MoTe2. We found four different phase stages, including two different types of coexistence phases of both 2H and 1 T' phases, 100% 2H phase, and 100% 1T' phase, would emerge, relying on the adopted tellurization velocity. Importantly, the tellurization velocity should be extremely controlled to obtain 100% 2H phase MoTe2, while 100% 1T' phase requires a fast tellurization velocity. We further found that such metallic-semiconducting-metallic phase evolution took place with a homogeneous spatial distribution and differs from previous reports in which obvious phase separations are usually found during the phase transition. The resulting MoTe2 shows high quality with room-temperature mobility comparable with mechanically exfoliated materials. The results might impact large-scale phase engineering of TMDs and other 2D materials for Weyl semimetal topological physics and potential 2D semiconductor device applications.

An Investigation in Phase Transition of MoTe2 Film with Continuous Tellurization Reaction

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Soft Hydrogen Plasma Induced Phase Transition in Monolayer and Few-Layer MoTe2

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

Controllable 2H-to-1t' Phase Transition in Few-Layer MoTe2.

In Situ STEM Observation of Phase Transition Triggered by Mo Migration in MoTe2.

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Photocarrier Dynamics in MoTe<sub>2</sub> Nanofilms with 2<i>H</i> and Distorted 1<i>T</i> Lattice Structures

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Phase transformations in single-layer MoTe2stimulated by electron irradiation and annealing

Reversible Electrochemical Phase Change in Monolayer to Bulk MoTe2 by Ionic Liquid Gating

N ov 2 01 9 Topological phase transition between distinct Weyl semimetal states in MoTe 2

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Unraveling the multistage phase transformations in monolayer Mo-Te compounds

Composition and Temperature-Dependent Phase Transition in Miscible Mo1−xWxTe2 Single Crystals

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films

Structural phase transition in monolayer MoTe2 driven by electrostatic doping

MoTe2: Semiconductor or Semimetal?