Abstract:Quantum dot (QD) light-emitting diodes (LEDs) are ideal for large-panel displays because of their excellent efficiency, colour purity, reliability and cost-effective fabrication1–4. Intensive efforts have produced red-, green- and blue-emitting QD-LEDs with efficiencies of 20.5 per cent4, 21.0 per cent5 and 19.8 per cent6, respectively, but it is still desirable to improve the operating stability of the devices and to replace their toxic cadmium composition with a more environmentally benign alternative. The performance of indium phosphide (InP)-based materials and devices has remained far behind those of their Cd-containing counterparts. Here we present a synthetic method of preparing a uniform InP core and a highly symmetrical core/shell QD with a quantum yield of approximately 100 per cent. In particular, we add hydrofluoric acid to etch out the oxidative InP core surface during the growth of the initial ZnSe shell and then we enable high-temperature ZnSe growth at 340 degrees Celsius. The engineered shell thickness suppresses energy transfer and Auger recombination in order to maintain high luminescence efficiency, and the initial surface ligand is replaced with a shorter one for better charge injection. The optimized InP/ZnSe/ZnS QD-LEDs showed a theoretical maximum external quantum efficiency of 21.4 per cent, a maximum brightness of 100,000 candelas per square metre and an extremely long lifetime of a million hours at 100 candelas per square metre, representing a performance comparable to that of state-of-the-art Cd-containing QD-LEDs. These as-prepared InP-based QD-LEDs could soon be usable in commercial displays. A method of engineering efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes (QD-LEDs) has improved their performance to the level of state-of-the-art cadmium-containing QD-LEDs, removing the problem of the toxicity of cadmium in large-panel displays.

25‐3: Highly Efficient, All‐Inkjet‐Printed, Deep Red Quantum Dot Light Emitting Diodes from Positive Aging

High-Performance, All-Inkjet-Printed Light-Emitting Diodes Based On Quantum Dots

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

P‐14.1: Improving the Performance of Inkjet Printed QLED by Annealing Post‐treatment

Realizing 17.0% External Quantum Efficiency in Red Quantum Dot Light-Emitting Diodes by Pursuing the Ideal Inkjet-Printed Film and Interface

65‐2: High Luminescent Red Quantum Dot Light‐Emitting Diodes by Inkjet Printing

Efficient Top-emitting Quantum Dot Light Emitting Diodes Via Inkjet Printing

High-efficiency and high-resolution patterned quantum dot light emitting diodes by electrohydrodynamic printing

Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes

Ultrahigh-resolution quantum-dot light-emitting diodes

Shelf-Stable Green and Blue Quantum Dot Light-Emitting Diodes with High Efficiencies

High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing

High Performance Inkjet‐Printed Quantum‐Dot Light‐Emitting Diodes with High Operational Stability

Shelf-stable quantum-dot light-emitting diodes with high operational performance

Quantum‐Dot Light‐Emitting Diodes for Large‐Area Displays: Towards the Dawn of Commercialization

Achieving high performance InP quantum dot light-emitting devices by using inkjet printing

Water-induced high-performance quantum-dot light-emitting diodes

High performance inkjet-printed QLEDs with 18.3% EQE: improving interfacial contact by novel halogen-free binary solvent system

P‐14.2: Optimizing the Performance of Inkjet Printed Green QLED by Precisely Control of Shell Thickness

High-performance inkjet-printed inverted QD-LEDs based on cross-linkable electron regulation layers

Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes