Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Memristors: Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches (adv. Electron. Mater. 3/2018)

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture

A Spin–Orbit‐Torque Memristive Device

Memristive Switching: Magneto‐Memristive Switching in a 2D Layer Antiferromagnet (Adv. Mater. 2/2020)

Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties

Floating-gate memristor based on a MoS2/h-BN/AuNPs mixed-dimensional heterostructure

Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

Spin‐Torque Memristors: Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing (adv. Sci. 10/2021)

Switching Dynamics and Computing Applications of Memristors: an Overview

Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

HfO2/WO3 Heterojunction Structured Memristor for High‐Density Storage and Neuromorphic Computing

Memristors for Memory and Computing Applications

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Solid-State Synapse Based on Magnetoelectrically Coupled Memristor.

Magneto‐Memristive Switching in a 2D Layer Antiferromagnet