Erratum: Corrigendum: MoS2 memristor with photoresistive switching

Wei Wang,Gennady N. Panin,Xiao Fu,Lei Zhang,P. Ilanchezhiyan,Vasiliy O. Pelenovich,Dejun Fu,Tae Won Kang

DOI: https://doi.org/10.1038/srep33107

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 6: Article number: 31224; published online: 05 August 2016; updated: 14 November 2016

What problem does this paper attempt to address?

Correction: Corrigendum: MoS2 memristor with photoresistive switching

Wang, Wei,Panin, Gennady N.,Fu, Xiao,Zhang, Lei,Ilanchezhiyan, P.,Pelenovich, Vasiliy O.,Fu, Dejun,Kang, Tae Won

DOI: https://doi.org/10.1038/srep33107

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 6: Article number: 31224; published online: 05 August 2016; updated: 14 November 2016
Corrigendum: MoS2 memristor with photoresistive switching.

Wei Wang,Gennady N Panin,Xiao Fu,Lei Zhang,P Ilanchezhiyan,Vasiliy O Pelenovich,Dejun Fu,Tae Won Kang

DOI: https://doi.org/10.1038/srep33107

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 6: Article number: 31224; published online: 05 August 2016; updated: 14 November 2016
Mos2 Memristor With Photoresistive Switching (Vol 6, 31224, 2016)

Wei Wang,Gennady N. Panin,Xiao Fu,Lei Zhang,P. Ilanchezhiyan,Vasiliy O. Pelenovich,Dejun Fu,Tae Won Kang

DOI: https://doi.org/10.1038/srep33107

IF: 4.6

2016-01-01

Scientific Reports

Abstract:A Nature Research Journal
Erratum: “A model of TaOx threshold switching memristor for neuromorphic computing” [J. Appl. Phys. 132, 064904 (2022)]

Xing Li,Zhe Feng,Jianxun Zou,Xu Wang,Guyue Hu,Feifei Wang,Cheng Ding,Yunlai Zhu,Fei Yang,Zuheng Wu,Yuehua Dai

DOI: https://doi.org/10.1063/5.0123486

IF: 2.877

2022-01-01

Journal of Applied Physics

Abstract:First Page
Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Pengtao Li,Ziyang Zhang,Zijian Wang,Guobin Zhang,Shengpeng Xing,Zhen Wang,Xuemeng Fan,Zhejia Zhang,Qi Luo,Yishu Zhang

DOI: https://doi.org/10.1109/icicdt63592.2024.10717633

2024-01-01

Abstract:The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching their limits, making next-generation solutions crucial. In this letter, we explore dual-layer oxide memristors of $\text{SiN}_{X}$ and ZnO for applications in volatile and non-volatile resistive switching memory. We demonstrated the reversible transition between volatile and non-volatile behaviors by controlling the current compliance. In the non-volatile state, the device exhibits low set and reset voltages of 0.23 V and -0.24 V, respectively. Finally, we provided a mechanistic explanation consistent with dual-layer oxide memristors and conducted a fitting of the conduction mechanism.
MoS2 memristor with photoresistive switching.

Wei Wang,Gennady N Panin,Xiao Fu,Lei Zhang,P Ilanchezhiyan,Vasiliy O Pelenovich,Dejun Fu,Tae Won Kang

DOI: https://doi.org/10.1038/srep31224

IF: 4.6

2016-01-01

Scientific Reports

Abstract:A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.
Author Correction: Robust Memristors Based on Layered Two-Dimensional Materials

Miao Wang,Songhua Cai,Chen Pan,Chenyu Wang,Xiaojuan Lian,Ye Zhuo,Kang Xu,Tianjun Cao,Xiaoqing Pan,Baigeng Wang,Shi-Jun Liang,J. Joshua Yang,Peng Wang,Feng Miao

DOI: https://doi.org/10.1038/s41928-018-0044-x

IF: 33.255

2018-01-01

Nature Electronics

Abstract:In the version of this Article originally published, the author Xiaoqing Pan's two affiliations with the University of California, Irvine, were mistakenly omitted. They are: Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, USA; Department of Physics and Astronomy, University of California, Irvine, CA, USA. These have now been included in the Article.
Correction: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst

Fengyou Yang,Shengyao Chen,Huimin Feng,Cong Wang,Xiaofeng Wang,Shu Wang,Zhican Zhou,Bo Li,Lijun Ma,Haiguang Yang,Yong Xie,Qian Liu

DOI: https://doi.org/10.1039/D0TC90064H

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst’ by Fengyou Yang et al., J. Mater. Chem. C, 2020, 8, 2664–2668.
Correction: High-performance optoelectronic memory based on bilayer MoS<sub>2</sub> grown by Au catalyst

Fengyou Yang,Shengyao Chen,Huimin Feng,Cong Wang,Xiaofeng Wang,Shu Wang,Zhican Zhou,Bo Li,Lijun Ma,Haiguang Yang,Yong Xie,Qian Liu

DOI: https://doi.org/10.1039/d0tc90064h

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst’ by Fengyou Yang et al., J. Mater. Chem. C, 2020, 8, 2664–2668.
Publisher Correction: an Electrochemical Thermal Transistor

Sood, Aditya,Xiong, Feng,Chen, Shunda,Wang, Haotian,Selli, Daniele,Zhang, Jinsong,McClellan, Connor J.,Sun, Jie,Donadio, Davide,Cui, Yi,Pop, Eric,Goodson, Kenneth E.

DOI: https://doi.org/10.1038/s41467-019-12471-4

IF: 16.6

2019-01-01

Nature Communications

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Corrigendum: Nonvolatile modulation of electronic structure and correlative magnetism of L10-FePt films using significant strain induced by shape memory substrates.

Chun Feng,Jiancheng Zhao,Feng Yang,Kui Gong,Shijie Hao,Yi Cao,Chen Hu,Jingyan Zhang,Zhongqiang Wang,Lei Chen,Sirui Li,Li Sun,Lishan Cui,Guanghua Yu

DOI: https://doi.org/10.1038/srep23878

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 6: Article number: 20199; published online: 01 February 2016; updated: 20 April 2016. This Article contains typographical errors in in the Methods section. “Mg K α radiation was used with the X-ray source that was run at 14.5 kV. The energy analyzer operated at a constant pass energy of 50 eV.
Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors

Yifu Huang,Yuqian Gu,Sivasakthya Mohan,Andrei Dolocan,Nicholas D. Ignacio,Shanmukh Kutagulla,Kevin Matthews,Alejandra Londoño‐Calderon,Yao‐Feng Chang,Ying‐Chen Chen,Jamie H. Warner,Michael T. Pettes,Jack C. Lee,Deji Akinwande

DOI: https://doi.org/10.1002/adfm.202214250

IF: 19

2023-04-14

Advanced Functional Materials

Abstract:Statistical electrical measurements of 2D memristors show the extraordinary improvement of yield and endurance by optimizing the metal deposition and MoS2 condition. The intriguing convergence of switching voltages and resistance ratio is revealed. An "effective switching layer" model compatible with both monolayer and few‐layer MoS2, is proposed to understand the reliability improvement and the convergence of switching metrics. 2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors. Here, the impact of metallization conditions and the thickness of MoS2 films on the reliability and other device metrics of MoS2‐based memristors is carefully studied. The statistical electrical measurements show that the reliability can be improved to 92% for yield and improved by ≈16× for average DC cycling endurance in the devices by reducing the top electrode (TE) deposition rate and increasing the thickness of MoS2 films. Intriguing convergence of switching voltages and resistance ratio is revealed by the statistical analysis of experimental switching cycles. An "effective switching layer" model compatible with both monolayer and few‐layer MoS2, is proposed to understand the reliability improvement related to the optimization of fabrication configuration and the convergence of switching metrics. The Monte Carlo simulations help illustrate the underlying physics of endurance failure associated with cluster formation and provide additional insight into endurance improvement with device fabrication optimization.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Erratum: Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

J. J. Wang,J. M. Hu,Ren-Ci Peng,Y. Gao,Y. Shen,L. Q. Chen,C. W. Nan

DOI: https://doi.org/10.1038/srep21443

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 5: Article number:10459; published online: 21 May 2015; updated: 23 February 2016 This Article contains a typographical error in a grant number in the Acknowledgements section. “This work was supported by the NSF of China (Grant Nos 11234005, 51332001, 51221291, and 51472140), andthe NSF (Grant No: DMR-1410714, DMR-0820404, and DMR-1210588).
Correction to “Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides”

Hope Bretscher, Zhaojun Li, James Xiao, Diana Yuan Qiu, Sivan Refaely-Abramson, Jack A Alexander-Webber, Arelo Tanoh, Ye Fan, Geraud Delport, Cyan A Williams, Samuel D Stranks, Stephan Hofmann, Jeffrey B Neaton, Steven G Louie, Akshay Rao

2021-06-14

Abstract:In the methods section,“Device Preparation and Measure-ment”, the caption of Figure 5 incorrectly stated,“An example of the gate voltage versus mobility for different chemical treatment steps.” This should instead state,“Example transfer curves showing the conductivity, σ, as a function of back gate, VG, for MoS2 devices after different treatments.” This is correctly described in the text referring to this figure, but the caption was mislabeled. The amended Figure 5 appears below. We apologize for the mistake in the original submission.
Correction: Corrigendum: Gated Three-Terminal Device Architecture to Eliminate Persistent Photoconductivity in Oxide Semiconductor Photosensor Arrays

Sanghun Jeon,Seung-Eon Ahn,Ihun Song,Chang Jung Kim,U-In Chung,Eunha Lee,Inkyung Yoo,Arokia Nathan,Sungsik Lee,Khashayar Ghaffarzadeh,John Robertson,Kinam Kim

DOI: https://doi.org/10.1038/nmat4236

IF: 41.2

2015-01-01

Nature Materials

Abstract:Nature Materials 11, 301–305 (2012); published online 26 February 2012; corrected after print 16 February 2015. In the version of this Letter originally published, Khashayar Ghaffarzadeh, with affiliation at the London Centre for Nanotechnology, University College London, London WC1H 0AH, UK, had been omitted from the list of authors.
Correction: Corrigendum: Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power

Li, Lijie,Jiang, Jian-Hua

DOI: https://doi.org/10.1038/srep33942

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 6: Article number: 31974; published online: 23 August 2016; updated: 22 September 2016 In the original version of this Article, there were typographical errors in Affiliation 1 which was incorrectly given as ‘Multidisciplinary Nanotechnology Centre, College of Engineering, SwanseaUniversity, Bay Campus, Swansea, SA1 8QQ, UK.
Corrigendum: Graphene and PbS Quantum Dot Hybrid Vertical Phototransistor (2017 Nanotechnology 28 145201)

Xiaoxian Song,Yating Zhang,Haiting Zhang,Yu,Mingxuan Cao,Yongli Che,Hongguang Dai,Junbo Yang,Xin Ding,Jianquan Yao

DOI: https://doi.org/10.1088/1361-6528/ac1af8

IF: 3.5

2022-01-01

Nanotechnology

Abstract:Recently, when we sorting through published articles, we find a mistake: the transmission electron microscope (TEM) of PbSe QDs figure 1（d）from Nanotechnology 27 (2016) 405201 is incorrectly used as a TEM image of PbS QDs in the inset of figure 1(a) in my paper (Nanotechnology 28 (2017) 145201). We provide a corrected TEM image and replace the original TEM image of figure 1(a) in our paper (Nanotechnology 28 (2017) 145201). The corrigendum of our paper here is provided. The corrigendum does not affect the conclusions of that paper. The ACKNOWLEDGMENTS section should be added. The authors apologize for any inconvenience that this may have caused.
Facile fabrication of integrated three-dimensional CMoSe<sub>2</sub>/reduced graphene oxide composite with enhanced performance for sodium storage (vol 9, pg 1618, 2016)

Dong Xie,Wangjia Tang,Yadong Wang,Xinhui Xia,Yu Zhong,Ding Zhou,Donghuang Wang,Xiuli Wang,Jiangping Tu

DOI: https://doi.org/10.1007/s12274-020-3198-6

IF: 9.9

2021-01-01

Nano Research

Abstract:The authors regret that Fig. 5(d) in page 1625 of the original paper needs to be corrected. The rate capability of C-MoSe2 electrode was unfortunately mistaken. The correct Fig. 5(d) is shown below. The corresponding figure caption and conclusions are not affected and thus not to be changed. The authors would like to apologise for any inconvenience caused.
Correction: Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Wang, J. J.,Hu, J. M.,Peng, Ren-Ci,Gao, Y.,Shen, Y.,Chen, L. Q.,Nan, C. W.

DOI: https://doi.org/10.1038/srep21443

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 5: Article number:10459; published online: 21 May 2015; updated: 23 February 2016 This Article contains a typographical error in a grant number in the Acknowledgements section. “This work was supported by the NSF of China (Grant Nos 11234005, 51332001, 51221291, and 51472140), andthe NSF (Grant No: DMR-1410714, DMR-0820404, and DMR-1210588).
Correction: Corrigendum: Optoelectronic Crystal of Artificial Atoms in Strain-Textured Molybdenum Disulphide

Li, Hong,Contryman, Alex W.,Qian, Xiaofeng,Ardakani, Sina Moeini,Gong, Yongji,Wang, Xingli,Weisse, Jeffrey M.,Lee, Chi Hwan,Zhao, Jiheng,Ajayan, Pulickel M.,Li, Ju,Manoharan, Hari C.,Zheng, Xiaolin

DOI: https://doi.org/10.1038/ncomms9080

IF: 16.6

2015-01-01

Nature Communications

Abstract:Nature Communications 6: Article number: 7381 (2015); Published: 19 Jun 2015; Updated: 6 Aug 2015. The original version of this Article contained a typographical error in the spelling of the author Jeffrey M. Weisse, which was incorrectly given as Jeffery M. Weisse. This has now been corrected in both the PDF and HTML versions of the Article.

Erratum: Corrigendum: MoS2 memristor with photoresistive switching

Correction: Corrigendum: MoS2 memristor with photoresistive switching

Corrigendum: MoS2 memristor with photoresistive switching.

Mos2 Memristor With Photoresistive Switching (Vol 6, 31224, 2016)

Erratum: “A model of TaOx threshold switching memristor for neuromorphic computing” [J. Appl. Phys. 132, 064904 (2022)]

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

MoS2 memristor with photoresistive switching.

Author Correction: Robust Memristors Based on Layered Two-Dimensional Materials

Correction: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst

Correction: High-performance optoelectronic memory based on bilayer MoS<sub>2</sub> grown by Au catalyst

Publisher Correction: an Electrochemical Thermal Transistor

Corrigendum: Nonvolatile modulation of electronic structure and correlative magnetism of L10-FePt films using significant strain induced by shape memory substrates.

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors

Erratum: Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Correction to “Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides”

Correction: Corrigendum: Gated Three-Terminal Device Architecture to Eliminate Persistent Photoconductivity in Oxide Semiconductor Photosensor Arrays

Correction: Corrigendum: Staircase Quantum Dots Configuration in Nanowires for Optimized Thermoelectric Power

Corrigendum: Graphene and PbS Quantum Dot Hybrid Vertical Phototransistor (2017 Nanotechnology 28 145201)

Facile fabrication of integrated three-dimensional CMoSe<sub>2</sub>/reduced graphene oxide composite with enhanced performance for sodium storage (vol 9, pg 1618, 2016)

Correction: Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Correction: Corrigendum: Optoelectronic Crystal of Artificial Atoms in Strain-Textured Molybdenum Disulphide