Abstract:Based on some new accelerated lifetime models and failure equivalent circuit modeling techniques for the common semiconductor wear out mechanisms, simulation program with integrated circuit emphasis (SPICE) can be used to characterize CMOS VLSI circuit failure behaviors and perform reliability simulation. This paper used a simple SRAM circuit as an example to demonstrate how to apply SPICE to circuit reliability modeling, simulation, analysis, and design. The SRAM circuit, implemented with a commercial 0.25-mu m technology, consists of functional blocks of 1-bit six-transistor cell, precharge, read/write control, and sense amplifier. The SRAM operation sequence of "write 0, read 0, write 1, read 1" was first simulated in SPICE to obtain the terminal voltage and current stress profiles of each transistor. Then, normalized lifetimes of all transistors in terms of each failure mechanism were calculated with the corresponding accelerated lifetime models. These lifetime values were sorted to single out the most damaged transistors. Finally, the selected transistors were substituted with failure equivalent circuit models, and SPICE simulations were performed again to characterize the circuit performance, functionality, and failure behaviors. The simulation shows that the 0.25-mu m technology, hot-carrier injection (HCI), and time-dependent dielectric breakdown (TDDB) had significant effects on SRAM-cell stability and voltage-transfer characteristics, while negative bias temperature instability (NBTI) mainly degraded the cell transition speed when the cell state flipped. This illustrative SRAM simulation work proves that, with SPICE and the failure equivalent circuit models, circuit designers can better understand the damage effects of HCI/TDDB/NBTI on the circuit operation, quickly estimate the circuit lifetime, make appropriate performance/reliability tradeoffs, and formulate practical design guidelines to improve the circuit reliability.

A Timing Yield Model for SRAM Cells at Sub/Near-Threshold Voltages Based on a Compact Drain Current Model

A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

MAXIMUM LIKELIHOOD ESTIMATION FOR FAILURE ANALYSIS OF SRAM CELLS USING INDUCTIVE FAULT ANALYSIS

An advanced statistical compact model strategy for SRAM simulation at reduced VDD.

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

Physical Modeling of Bitcell Stability in Subthreshold SRAMs for Leakage-Area Optimization under PVT Variations.

Stochastic Nonlinear Dynamical Modelling of SRAM Bitcells in Retention Mode

Efficient Yield Analysis for SRAM and Analog Circuits using Meta-Model based Importance Sampling Method

The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM

Sram Circuit-Failure Modeling and Reliability Simulation with Spice

An Accurate and Efficient Yield Analysis for SRAM Dynamic Metrics Using Differential Evolution Algorithm

Rapid Estimation of the Probability of SRAM Failure Via Adaptive Multi-Level Sliding-Window Statistical Method.

A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification

An Efficient Optimization Based Method to Evaluate the DRV of SRAM Cells

An Efficient SRAM Yield Analysis Method using Multi -Fidelity Neural Network

Accurate Estimation of SRAM Dynamic Stability

Modeling and Designing of a PVT Auto-Tracking Timing-Speculative SRAM

Analysis of Access-Time Failure Probability Due to Random Dopant Fluctuation in 6T SRAM

Compact Analytical Models for the SET and RESET Switching Statistics of RRAM Inspired in the Cell-Based Percolation Model of Gate Dielectric Breakdown

Compact Reliability Model of Analog RRAM for Computation-in-Memory Device-to-System Codesign and Benchmark