Erratum: Corrigendum: Direct Observation of Long Electron-Hole Diffusion Distance in CH3NH3PbI3 Perovskite Thin Film

Yu Li,Weibo Yan,Yunlong Li,Shufeng Wang,Wei Wang,Zuqiang Bian,Lixin Xiao,Qihuang Gong
DOI: https://doi.org/10.1038/srep20265
IF: 4.6
2016-01-01
Scientific Reports
Abstract:In high performance perovskite based solar cells, CH3NH3PbI3 is the key material. We carried out a study on charge diffusion in spin-coated CH3NH3PbI3 perovskite thin film by transient fluorescent spectroscopy. A thickness-dependent fluorescent lifetime was found. By coating the film with an electron or hole transfer layer, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) or 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD) respectively, we observed the charge transfer directly through the fluorescence quenching. One-dimensional diffusion model was applied to obtain long charge diffusion distances in thick films, which is ~1.7 μm for electrons and up to ~6.3 μm for holes. Short diffusion distance of few hundreds of nanometer was also observed in thin film. This thickness dependent charge diffusion explained the formerly reported short charge diffusion distance (~100 nm) in films and resolved its confliction to thick working layer (300–500 nm) in real devices. This study presents direct support to the high performance perovskite solar cells and will benefit the devices’ design.
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