Spintronics in Semiconductor Nanostructures

T. Nie

DOI: https://doi.org/10.1016/b978-0-12-803581-8.02055-5

2016-01-01

Abstract:Spintronics as a potential solution to substitute the current CMOS technology, has attracted great attentions in the past decade, due to its increased functionality of nonvolatility and low power dissipation. To this end, it is extremely urgent and essential to achieve high efficient spin injection/detection between ferromagnetic contact and semiconductor with manipulable spin transport in semiconductor with long spin lifetime and diffusion length. The main obstacle for high efficient spin injection comes from the conductive mismatch between the ferromagnetic contact and semiconductor. In this paper, we give a review about the progress and the strategy in solving such critical problem. It refers to the substitution of ferromagnetic metal by half metal or diluted magnetic semiconductor, introducing appropriate Schottky barrier and various types of tunneling oxides. To increase the spin lifetime and diffusion length, the semiconductor nanostructure is found to be much more favorable compared to the bulk and thin film. Furthermore, a new spinFET prototype will be referred to in this paper.