A Study of Perpendicular-Anisotropy Magnetic Tunnel Junction Switched by Spin-Hall-assisted Spin-Transfer Torque

Z Wang,W. Zhao,E. Deng,J. Klein,C. Chappert

DOI: https://doi.org/10.1109/intmag.2015.7157181

2015-01-01

Abstract:Current-induced spin-transfer torque (STT) is a mainstream method of switching the magnetization of free layer of magnetic tunnel junctions (MTJs) [1-2]. However, currently STT-MTJ is suffering from speed and energy bottlenecks caused by two tradeoffs: firstly, since the critical write current (Ic0) is proportional to the thermal stability barrier (Δ), it is difficult to reduce Ic0 without decreasing Δ. Secondly, the write current is limited to a relative small value to avoid the barrier breakdown, resulting in a low write speed. To overcome these bottlenecks, recent experiments [3-7] provide alternative write schemes in which spin Hall effect (SHE) and Rashba effect are used for switching the three-terminal MTJs (see Fig. 1). However, the applications of these schemes are hindered by some disadvantages: For switching a perpendicular-anisotropy MTJ (p-MTJ), both a charge current and an additional magnetic field are required (see Fig. 1(a)), which adds complexity to architecture. If an in-plane-anisotropy MTJ (i-MTJ) is used instead of p-MTJ, deterministic switching can be achieved by a charge current without the need of magnetic field (see Fig. 1(b)), but i-MTJ is inferior to p-MTJ in the scalability.