Acoustic Wave Induced FMR Assisted Spin-Torque Switching of Perpendicular MTJs with Anisotropy Variation

Walid Al Misba,Md. Mahadi Rajib,Dhritiman Bhattacharya,Jayasimha Atulasimha
DOI: https://doi.org/10.1103/PhysRevApplied.14.014088
2020-03-29
Abstract:We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect of thermal noise. With suitable frequency excitation, the SAW can induce ferromagnetic resonance in magnetostrictive materials, and the magnetization can precesses in a cone with high deflection from the perpendicular direction. With incorporation of inhomogeneity via lateral anisotropy variation as well as room temperature thermal noise, the magnetization precession in different gains can be significantly incoherent. Interestingly, the precession in different grains are found to be in phase, even though the precession amplitude (angle of deflection from the perpendicular direction) vary across grains of different anisotropy. Nevertheless, the high mean deflection angle can complement the STT switching by reducing the STT current significantly; even though the applied stress induced change in anisotropy is much lower than the total anisotropy barrier. This work indicates that SAW assisted switching can improve energy efficiency while being scalable to very small dimensions, which is technologically important for STT-RAM and elucidates the physical mechanism for the potential robustness of this paradigm in realistic scenarios with thermal noise and material inhomogeneity
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: How to reduce the spin - transfer - torque (STT) current requirement in perpendicular magnetic tunnel junctions (p - MTJ) and improve their energy efficiency and scalability through surface - acoustic - wave (SAW) - induced ferromagnetic resonance (FMR) - assisted STT switching. Specifically, the research aims to: 1. **Reduce STT current requirement**: By introducing SAW - induced FMR, the free - layer magnetization can obtain a greater torque when subjected to STT, thereby reducing the required STT current. 2. **Improve energy efficiency**: SAW - assisted STT switching can significantly reduce the write energy while maintaining high reliability and low power consumption. 3. **Achieve small - size scalability**: Ensure that SAW - assisted STT switching remains effective at the nanoscale, even in the presence of material inhomogeneity and thermal - noise effects. ### Key issues - **Material inhomogeneity**: The research considered the influence of anisotropy changes within the material on the magnetization dynamics, especially the differences in the magnetization precession angles in different regions. - **Thermal - noise influence**: At room temperature, thermal noise can cause random fluctuations in the magnetization direction. The research explored the influence of these fluctuations on SAW - assisted STT switching. - **SAW frequency selection**: Determine the optimal SAW frequency to maximize the magnetization precession amplitude and thus enhance the STT effect. ### Research methods The researchers used micromagnetic simulation tools (such as mumax3) to simulate the magnetization dynamics of the p - MTJ free layer, including thermal noise and lateral anisotropy changes. By solving the Landau - Lifshitz - Gilbert - Slonczewski equation, the magnetization behavior under different conditions was studied. ### Main findings - **High average deflection angle**: SAW - induced FMR can make the magnetization precess almost synchronously in different regions, producing a relatively high average deflection angle, thereby enhancing the STT effect. - **Reduced STT current**: Compared with the case without SAW assistance, the current density required for SAW - assisted STT switching is significantly reduced. - **Robustness**: Even in the presence of material inhomogeneity and thermal noise, the performance of SAW - assisted STT switching remains stable and does not degrade significantly. ### Technical significance This research provides theoretical and technical support for the development of high - performance, low - energy - consumption STT - RAM (spin - transfer - torque random - access memory), especially significant for applications at the nanoscale. In addition, the SAW - induced FMR technology may also be applied to other low - power - consumption electronic devices.