Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling
Delin Zhang,Mukund Bapna,Wei Jiang,Duarte Sousa,Yu-Ching Liao,Zhengyang Zhao,Yang Lv,Protyush Sahu,Deyuan Lyu,Azad Naeemi,Tony Low,Sara A. Majetich,Jian-Ping Wang
DOI: https://doi.org/10.1021/acs.nanolett.1c03395
IF: 10.8
2022-01-04
Nano Letters
Abstract:Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of the ferromagnetic layer via the electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here, we demonstrate a bipolar electric field effect switching of 100 nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ∼1.1 × 10<sup>5</sup> A/cm<sup>2</sup>, is 1 order of magnitude lower than that of the best-reported spin-transfer torque devices. Theoretical results suggest that the electric field induces a ferromagnetic-antiferromagnetic exchange coupling transition of the synthetic antiferromagnetic free layer and generates a fieldlike interlayer exchange coupling torque, which causes the bidirectional magnetization switching of p-MTJs. These results could eliminate the major obstacle in the development of spin memory devices beyond their embedded applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology