Abstract:We have investigated the magnetoresistance of Permalloy (Ni80Fe20) films with thicknesses ranging from a single monolayer to 12 nm, grown on Al2O3, MgO and SiO2 substrates. Growth and transport measurements were carried out under cryogenic conditions in UHV. Applying in-plane magnetic vector fields up to 100 mT, the magnetotransport properties are ascertained during growth. With increasing thickness the films exhibit a gradual transition from tunneling magnetoresistance to anisotropic magnetoresistance. This corresponds to the evolution of the film structure from separated small islands to a network of interconnected grains as well as the transition from superparamagnetic to ferromagnetic behavior of the film. Using an analysis based on a theoretical model of the island growth, we find that the observed evolution of the magnetoresistance in the tunneling regime originates from the changes in the island size distribution during growth. Depending on the substrate material, significant differences in the magnetoresistance response in the transition regime between tunneling magnetoresistance and anisotropic magnetoresistance were found. We attribute this to an increasingly pronounced island growth and slower percolation process of Permalloy when comparing growth on SiO2, MgO and Al2O3 substrates. The different growth characteristics result in a markedly earlier onset of both tunneling magnetoresistance and anisotropic magnetoresistance for SiO2. For Al2O3 in particular the growth mode results in a structure of the film containing two different contributions to the ferromagnetism which lead to two distinct coercive fields in the high thickness regime.

RESEARCH ON THE PERMEABILITY AND DOMAIN STRUCTURES OF ETCHED PERMALLOY THIN FILM MAGNETIC POLE

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