Abstract:It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO3/SrTiO3 or PbZr0.2Ti0.8O3/SrTiO3 heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO3/SrTiO3 heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO3/SrTiO3 heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO3/SrTiO3 heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti3+ and Ti4+ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO3. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.

Energy band alignment between Pb(Zr,Ti)O<sub>3</sub>and high and low work function conducting oxides—from hole to electron injection

Energy Band Alignment Between Pb(Zr,Ti)O-3 And High And Low Work Function Conducting Oxides-From Hole To Electron Injection

Energy Band Alignment at Ferroelectric/Electrode Interface Determined by Photoelectron Spectroscopy

Pbtio3/Srtio3 Interface: Energy Band Alignment and Its Relation to the Limits of Fermi Level Variation

Reduction-Induced Fermi Level Pinning at the Interfaces Between Pb(Zr,Ti)O-3 and Pt, Cu and Ag Metal Electrodes

Formation and modification of Schottky barriers at the PZT/Pt interface

Band Alignments at Interface of Zno/Fapbi(3) Heterojunction by X-Ray Photoelectron Spectroscopy

Experimental Band Structure of Pb(Zr,Ti)O3: Mechanism of Ferroelectric Stabilization

Band Alignment of Ultra-Thin Hetero-Structure Zno/Tio2 Junction

Controlling the Work Function of Zno and the Energy-Level Alignment at the Interface to Organic Semiconductors with A Molecular Electron Acceptor

Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions

Periodic Misfit Dislocation And Electron Aggregation At (010) Pbtio3/Srtio3 Heterointerface

In situ study of the electronic structure of polar-to-polar SrTiO3/(000 1 ̅ )ZnO heterointerface

Scanning force microscopy investigation of the Pb(Zr0.25Ti0.75)O3/Pt interface

Atomic-Scale Structure and Properties of Epitaxial PbZr 0.2 Ti 0.8 O 3 /SrRuO 3 Heterointerfaces

Preparation and Characterization of Pb(ZrxTi1-x)O3 Thin Film on Indium Tin Oxide

Formation Mechanisms of Low-Resistivity Ni∕Pt Ohmic Contacts to Li-Doped P-Type ZnO

Perovskite-type cobalt oxide at the multiferroic Co/Pb Zr$_{0.2}$Ti$_{0.8}$O$_{3}$ interface

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) Heterojunctions

Effect of Bottom Electrodes on Microstructures and Electrical Properties of Sol–gel Derived Pb(Zr0.53 Ti0.47)O3 Thin Films

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface