Abstract:We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultralow temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in the two-dimensional electron layer, enclosing an approximately circular island. Front gates deposited in etch trenches allow one to change the constriction filling, relative to the bulk. A systematic variation of the front-gate voltage affects the constriction and the island electron density, while the bulk density remains unaffected. This results in quantized plateaus in longitudinal resistance, while the Hall resistance is dominated by the low-density, low-filling constriction. At lower fields, when the quantum Hall plateaus fail to develop, we observe bulk Shubnikov-de Haas oscillations in series corresponding to an integer filling of the magnetoelectric subbands in the constrictions. This shows that the whole interferometer region is still quantum coherent at these lower fields at 10 mK. Analyzing the data within a Fock-Darwin model, we obtain the constriction electron density as a function of the front-gate bias and, extrapolating to the zero field, the number of electric subbands (conductance channels) resulting from the electron confinement in the constrictions.

Resistance Minimum Observed at Landau Level Filling Factorν=1/2in Ultra High Magnetic Fields

Resistance Fluctuations in Composite Fermion State Near Landau Level Filling Factor Ν= 1/2 in A Square Quantum Well

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Nu = 5/2 Fractional Quantum Hall Effect at 10 T: Implications for the Pfaffian State.

Observation of an Even–Odd Asymmetric Transport in High Landau Levels

Observation of anti-levitation of Landau levels in vanishing magnetic fields

From insulator to quantum Hall liquid at low magnetic fields

$ν=1/2$ Fractional Quantum Hall Effect in Tilted Magnetic Fields

Enhancement of the Ν = 5/2 Fractional Quantum Hall State in a Small In-Plane Magnetic Field.

Strongly anisotropic electronic transport in higher Landau levels

Negative nonlocal vicinity resistance of viscous flow in a two-dimensional electron system

Effect of DC electric field on longitudinal resistance of two dimensional electrons in a magnetic field

The quantized Hall effect in the presence of resistance fluctuations

Strongly anisotropic transport in higher two-dimensional Landau levels

Composite Fermion States Around the Two-Dimensional Hole Landau Level Filling Factor 32 in Tilted Magnetic Fields

Magneto-Resistance for Two-Dimensional Electron Gas in Gan/Alxga1-Xn Heterostructure

New Results at Half-Fillings in the Second and Third Landau Level

Strongly Anisotropic Electronic Transport at Landau Level Filling Factor ν = 9 / 2 and ν = 5 / 2 under a Tilted Magnetic Field

Effects of Interchannel Coupling in A Two-Dimensional Electron Gas at High Magnetic Fields

Composite Fermion States around 2D Hole Landau Level Filling Factor 3/2 in Tilted Magnetic Fields