Resistance Fluctuations in Composite Fermion State Near Landau Level Filling Factor Ν= 1/2 in A Square Quantum Well

Jian Zhang,R. R. Du,J. A. Simmons,J. L. Reno
DOI: https://doi.org/10.48550/arxiv.0808.4145
2008-01-01
Abstract:We have studied the magnetotransport near Landau level filling factor ν = 1/2 in a GaAs-Al0.3Ga0.7As square quantum well (width 35 nm) in magnetic field up to 42 T and in a temperature range between 50 mK and 1.5 K. In low temperatures T < 200 mK, the Rxx exhibits a deep, strongly temperature-dependent minimum centered at ν = 1/2. The concomitant Rxy is not strictly linear with magnetic field (B) and the first derivative of Rxy with respect to B shows a sharp cusp at ν = 1/2, indicating a non-classical Hall effect. We verify these characteristics are being single-layer origin by applying an in-plane magnetic field or electrostatic gates. The data may signal frustrations in the composite fermion state towards ν = 1/2 pairing in the quantum well where the electron layer thickness far exceeds the magnetic length.
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