Selective Growth of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="bold">α</mml:mi></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>Al</mml:mtext><mml:mtext>2</mml:mtext></mml:msub><mml:msub><mml:mtext>O</mml:mtext><mml:mtext>3</mml:mtext></mml:msub></mml:math>Nanowires and Nanobelts

Yong Zhang,Ruying Li,Xiaorong Zhou,Mei Cai,Xueliang Sun
DOI: https://doi.org/10.1155/2008/250370
IF: 3.791
2008-01-01
Journal of Nanomaterials
Abstract:We report the selective growth ofα-Al2O3nanowires and nanobelts via a catalyst-free chemical vapor deposition process under ambient pressure. By controlling the flow rates of the carrier gas, high-yield production of uniform alumina nanowires with diameter distribution (100 nm–200 nm) was achieved at a high growth rate over 200 μm/hour. Alumina nanobelts with variable width were also synthesized by modulating the carrier gas purge process. Further, the effects of temperatures and carrier gas flow rates on the growth of alumina nanostructures were also investigated. Oxygen partial pressure and supersaturation level of the aluminum suboxide are thought to be important factors in the formation process of the alumina nanowires or nanobelts. The typical growth of the alumina nanowires and nanobelts can be ascribed to vapor-solid (VS) mechanism.
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