Abstract:Quantum dots (QDs), renowned for their distinctive optical and physical attributes, are extensively employed in diverse fields such as lighting, displays, electronics, sensors, and solar cells. Nonetheless, the susceptibility to light, oxygen, and moisture is a major obstacle to the development of QDs. Achieving simple, efficient, and universal modification or encapsulation for enhanced stability remains a challenge. Herein, a one -step fast fabrication of multi-layer quantum dot diffusion plate (QD-DP) with excellent barrier and optical properties was proposed, which is alternately stacked by MS-EVOH and MS-QDs layers. The barrier phase morphology undergoes a fiber-flake transition induced by the bidirectional tensile force field during multiplication, and layer-by-layer encapsulation synergistically enhances the barrier performance, photo-oxygen stability, thermal-oxygen stability, and fluorescence lifetime of QD-DP in backlight applications. Under high-power UV irradiation, the fluorescence intensity of MS/MS-QD 128L dropped to 90 % (T-90) in only about 10 minutes, while the T-90 of MSE/MS-QD 128L was close to 216 hours, improved more than 1200 times. Concurrently, the quantum dot diffusion plate (QD-DP), characterized by an alternating multi-layer structure, demonstrated an elevated backlight color gamut value of similar to 120 % NTSC, outperforming conventional quantum dot light emitting diodes (QLED). Compared with existing QDs backlight modules, a simpler structure, more efficient preparation process, and longer fluorescence lifetime of QD-DP were achieved. Moreover, unlike prevalent modification or packaging technologies that only target specific QD types, our alternating multilayer coextrusion packaging technology is applicable to all kinds of QDs and is simple, efficient, and universal. It was believed that this work could provide new opportunities for all kinds of QDs encapsulation and application in many fields and will be the dawn of large-scale commercialization of QDs.

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High-Efficiency, Large-Area, Flexible Top-Emitting Quantum-Dot Light-Emitting Diode

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Large-Area Nanogap-Controlled 3D Nanoarchitectures Fabricated via Layer-by-Layer Nanoimprint

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