Abstract:The boron‐doped engineering, involving carbon quantum dots (CQDs), boron‐doped CQDs (BCQDs), and boron quantum dots, proves boron elements can enhance capturing free electrons, enabling the directed guidance of metal ions to form more ordered metal conductive filaments. Consequently, BCQDs‐based memristors exhibit controllable memristance stability and ternary‐flash type memory behaviors. This work provides a valuable reference for the advancement of memristors. Carbon quantum dots‐based memristors (CQDMs) have emerged as a rising star in data storage and computing. The key constraint to their commercialization is memristance variability, which mainly arises from the disordered conductive paths. Doping methodology can optimize electron and ion transport to help construct a stable conductive mode. Herein, based on boron (B)‐doped engineering strategy, three kinds of comparable quantum dots are synthesized, including carbon quantum dots (CQDs), a series of boron‐doped CQDs (BCQDs) with different B contents, and boron quantum dots. The corresponding device performances highlight the superiority of BCQDs‐based memristors, exhibiting a ternary flash‐type memory behavior with longer retention time and more controllable memristance stability. The comprehensive analysis results, including device performance, functional layer morphology, and material simulated calculation, illustrate that the doped B elements can directionally guide the migration of aluminum ions by enhancing the capture of free electrons, resulting in ordered conductive filaments and stable ternary memory behavior. Finally, the conceptual applications of logic display and logic gate are discussed, indicating a bright prospect for BCQDs‐based memristors. This work proves that modest B doping can optimize memristance property, establishing a theoretical foundation and template scheme for developing effective and stable CQDMs.

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