Abstract:Compared with silicon and silicon carbide devices, the unique electrical and structural characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them have different requirements for power module integration. This article proposes a novel integration scheme for the high-voltage lateral GaN HEMT dies without bonding wires. Based on the proposed integration scheme, a compact 650 V/30 A GaN power module with low parasitic parameters and high thermal performance is designed. The GaN dies are sandwiched between two ceramic substrates to improve thermal performance and ensure consistent thermal expansion coefficients. The multiple copper layer structure is used to increase wiring flexibility to reduce parasitic parameters. The design of gate and power loop layouts is discussed, and the common-mode (CM) capacitance is optimized. A comprehensive reliability evaluation is also carried out for this integration scheme. Finally, a double-sided cooling 650 V/30 A full-bridge GaN power module with 2.4 cm×1.3 cm×0.17 cm is fabricated. The thermal resistance is reduced by 30%–48% compared with the conventional single-sided cooling module. The power loop and gate loop inductances are reduced to 0.94 nH and 2 nH, respectively, and the CM capacitance is limited to 2.5 pF. The maximum dv/dt of the drain–source voltage is high as 150 V/ns with only 10% overshoot. Based on the power module, a 3.3-kW two-phase interleaved buck converter is developed. It has 820 W/in3 power density and 98.85% peak efficiency.

An Integrated GaN-Based Converter Based on Cooling-System-Inductor Structure for Point-of-load Converters

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

Three-Dimensional Integrated GaN-based DC-DC Converter with an Inductor Substrate

Magnetic Integration Structure for Two-Stage DC-DC Converters

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

A High Density 400 W DC/DC Power Module with Integrated Planar Transformer and Half Bridge GaN IC

Structural Design of A Five-Level Hybrid Active Npc Converter for High Power Density Motor Drives

A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

Magnetic Integration for GaN-based DC-DC Converters

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

An Integrated Power Module Based on the Power-System-In-Inductor Structure

Three Dimensional Integration of GaN-HEMT-based DC-DC Converter Using Planar Inductor As a Substrate

A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter

A GaN HEMT Integrated Power Module with Silver Sintering Processes

A Power Converter Integration Approach with a Multi-Functional Heat Sink Shaped Inductor

Symmetric Four-Phase Inverse Coupled Inductors for GaN-Based Interleaving Four-Phase Point-of-load Converters

A Highly Integrated GaN Power Module with Low Parasitic Inductance and High Thermal Performance

A High Power Density 3-Phase/1-phase Compatible MISN-PFC Converter for On-Board Charger

FoM Based Optimal Frequency and Voltage Level Design for High Efficiency High Density Multilevel PFC with GaN Device

10 Kw High Efficiency Compact GaN-Based DC/DC Converter Design