Abstract:This article presents a wideband millimeter-wave power amplifier (PA) with a capacitive stability enhancement technique. It is composed of three differential cascode stages to attain high-power gain and large output power. To ensure the stabilization of the amplifier, a robust technique based on a series base capacitor is proposed and applied in each stage. Each capacitor creates a low-frequency zero to adjust the phase and amplitude responses of the differential cascode structure. As a result, the phase margin of the loop gain is increased remarkably. By adjusting the series base capacitors, the low-frequency zeros and gains of the three stages can be optimized. Therefore, the operating bandwidth is also extended. Meanwhile, a transformer-based four-path power combination network with a large current capacity is developed to further enlarge the output power. The circuit is demonstrated in a commercial 0.13 μm SiGe BiCMOS process. According to the measurement results, the PA obtains a saturated output power (P Sat ) of 18.5 dBm and output referred 1-dB compression point (OP 1dB ) of 16.32 dBm at 77 GHz. The tested small-signal gain is 26.7 dB at 77 GHz. Its 3 dB gain bandwidth is beyond 21.5 GHz, which ranges from 68.5 to 90 GHz. The P Sat variation is less than 0.57 dB at the frequency range from 70 to 85 GHz. The measurement also shows the PA with the proposed technique is unconditionally stable over the entire frequency band. The chip area is only 0.684 mm 2 .

A Broadband Power Amplifier in 130-Nm SiGe BiCMOS Technology

A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 Μm SiGe BiCMOS

A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

A 100–117 GHz W-Band CMOS Power Amplifier With On-Chip Adaptive Biasing

A 30Mhz-3Ghz 1W Stacked-Fet GaAs MMIC Power Amplifier.

A 60㎓ Power Amplifier with 12.1 ㏈m & P1㏈CP in 0.18㎛ SiGe BiCMOS Process

Fully integrated pseudo differential K-band power amplifier in 0.13um standard CMOS

A Compact Multilayer-Stacked Guanella Transformer Based 50–680-Mhz GaAs Power Amplifier

A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process

A 140- and 220-Ghz Dual-Band Amplifier in 130-Nm SiGe BiCMOS Process

A C Band Fully-integrated SiGe BiCMOS Power Amplifier

A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 Dbm Output P1dB and 36.5% Peak PAE in 65-Nm CMOS.

A 6.3 Dbm 258-314 GHz Power Amplifier Using a Broadband 8-Way SQWL Power Combiner in 130-Nm SiGe BiCMOS Technology

A G-band Cascode Power Amplifier in 0.13 Um SiGe BiCMOS Technology

A 160 GHz High Output Power and High Efficiency Power Amplifier in a 130-Nm SiGe BiCMOS Technology

A 250–310 GHz Power Amplifier with 15-Db Peak Gain in 130-Nm SiGe BiCMOS Process for Terahertz Wireless System

A 0.1–1.2 GHz CMOS Ultra-Broadband Power Amplifier

A 38-48 GHz Power Amplifier with 23-dB Gain 18.5-dBm Psat and 28% PAE in 65-nm CMOS

A 2.4 GHz Fully Integrated Class-A Power Ampifier in 0.35&#956;m SiGe BiCMOS Technology

A Broadband Power Amplifier Covering 14-36 GHz in 65-nm CMOS Technology

A 206-264 GHz Power Amplifier Based on a High-Linearity Cascode Core With 15 dB Gain and 12.2-dBm P sat in 130-nm SiGe BiCMOS