Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2
Zhi-Qian Wu,Jing-Liang Yang,Nallappagar K. Manjunath,Yue-Jiao Zhang,Si-Rui Feng,Yang-Hua Lu,Jiang-Hong Wu,Wei-Wei Zhao,Cai-Yu Qiu,Jian-Feng Li,Shi-Sheng Lin
DOI: https://doi.org/10.1002/adma.201706527
IF: 29.4
2018-01-01
Advanced Materials
Abstract:2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS2 can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical-to-electrical conversion efficiency. To overcome this shortcoming, a "gap-mode" plasmon-enhanced monolayer MoS2 fluorescent emitter and photodetector is designed by squeezing the light-field into Ag shell-isolated nanoparticles-Au film gap, where the confined electromagnetic field can interact with monolayer MoS2. With this gap-mode plasmon-enhanced configuration, a 110-fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon-enhanced MoS2 fluorescent emitters. In addition, a gap-mode plasmon-enhanced monolayer MoS2 photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W-1 is demonstrated, exceeding previously reported plasmon-enhanced monolayer MoS2 photodetectors.