Abstract:CONSPECTUS: Widespread applications of magnetic devices, such as magnetic random-access memory (MRAM), logic-in memory, and neuromorphic computing devices, require an efficient method to manipulate the local magnetization. One superior mechanism is the spin-orbit torque (SOT) associated with spin currents generated by charge currents in a material with strong spin-orbit coupling. A higher SOT efficiency (i.e., a higher charge-to-spin conversion efficiency) is crucial for low-power SOT device operation. Therefore, materials possessing the merit of a high SOT are urgently desired for the innovation of SOT devices. Among all of the SOT materials, topological materials such as topological insulators and topological semimetals have attracted considerable attention recently because of their nontrivial band structures with strong spin-orbit coupling and expected giant SOT. Therefore, topological materials are regarded as promising candidates for future energy-efficient device applications. However, research in the area of topological material-based spintronics is still in an early stage, and the related physical, material and device issues still need to be addressed. In this Account, we review our recent progress regarding the charge-to-spin conversion and SOT-driven magnetization switching using the emerging topological materials, with an emphasis on topological insulators and Weyl semimetals. First, we introduce the extraordinary physical features of single-layer topological insulators associated with electron transport, charge-spin interconversion, and unique spin textures and subsequently present our SOT results for topological materials mainly for Bi2Se3. This material shows pronounced SOT with the in-plane and out-of-plane component due to the spin momentum locking and hexagonal warping effect, respectively. The SOT can be efficiently modulated by varying the film crystal directions or by interface engineering between Bi2Se3 and a ferromagnet. Thereafter, room-temperature magnetization switching by the electron-mediated or magnon-mediated spin torque is demonstrated in topological insulator-based devices, and the switching current density J(C) is on the order of similar to 10(5) A/cm(2), which is approximately 1 to 2 orders of magnitude smaller than that in heavy metals. Second, we summarize our SOT results in Weyl semimetals. Due to the broken crystal symmetry, Weyl semimetals (e.g., WTe2) can show an additional sizable out-of-plane spin polarization, which can be detected by electrical and optical techniques. Therefore, the Weyl semimetals can possess unconventional out-of-plane damping-like SOT, which will facilitate the field-free magnetization switching. The interface Dzyaloshinskii-Moriya interaction (DMI) is observed in Weyl semimetal/ferromagnet heterostructures, which can affect the domain wall motion. We also demonstrate the energy-efficient SOT-induced magnetization switching in Weyl semimetal-based devices. Third, we discuss the advances in SOT devices with wafer-scale topological materials prepared by industry-compatible techniques such as magnetron sputtering and chemical vapor deposition. These films may have stoichiometry similar to that of single-crystalline topological materials and SOTs as large as in single-crystalline topological materials. Finally, we present our perspectives for practical applications using this emerging family of quantum materials. We anticipate that this Account will deepen the understanding of SOT on topological materials, and our insights will guide the design and applications of high-performance topological material-based SOT devices.

Two-Dimensional Van Der Waals Materials for Spin-Orbit Torque Applications

Two-Dimensional Materials for Energy-Efficient Spin-Orbit Torque Devices

Spin‐Orbit Torque in Van der Waals‐Layered Materials and Heterostructures

First‐Principles Simulation and Materials Screening for Spin‐Orbit Torque in 2D van der Waals Heterostructures

Spin-orbit Torques: Materials, Mechanisms, Performances, and Potential Applications

Recent Progress on Controlling Spin-Orbit Torques by Materials Design

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Spin–Orbit Torques Based on Topological Materials

Recent Progress in Strong Spin-Orbit Coupling Van Der Waals Materials and Their Heterostructures for Spintronic Applications

Roadmap of spin-orbit torques

Spin-orbit torques: Materials, physics, and devices

Challenges and Opportunities for Spintronics Based on Spin Orbit Torque

Electrical and optical characterizations of spin-orbit torque

Spin–Orbit Torques in Metallic Magnetic Multilayers: Challenges and New Opportunities

Enhancement of Spin-Orbit Torque in WTe2/perpendicular Magnetic Anisotropy Heterostructures

Spintronics in Two-Dimensional Materials

Van der Waals magnetic materials for current-induced control toward spintronic applications

Recent advances in 2D van der Waals magnets: Detection, modulation, and applications

Symmetry Breaking by Materials Engineering for Spin-Orbit Torque Technology

Spintronic devices based on topological and two-dimensional materials

Magnetization Switching in van der Waals Systems by Spin-Orbit Torque